NVMFS5113PLT1G - -60V P-Ch MOSFET, 14mOhm | onsemi
Teilenummer: NVMFS5113PLT1G ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.58 | $1,58 |
| 10 | $1.42 | $14,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.99 | $495,00 |
| 1.000 | $0.85 | $850,00 |
| 3.000 | $0.72 | $2.160,00 |
NVMFS5113PLT1G Übersicht
A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. In the broader taxonomy, this part is a P-channel enhancement-mode power MOSFET belonging to the low/medium-voltage MOSFET family within discrete semiconductors. PMOS devices are widely used as high-side switches because their source-connected-to-load topology allows the gate to be pulled low relative to the source, removing the need for a charge pump that an N-channel high-side switch would require.
Key features of the NVMFS5113PLT1G include an extremely low typical RDS(on) of 14 mOhm at VGS=-10V to minimize conduction losses, a logic-level gate threshold that supports direct drive from 4.5V or 5V logic, and avalanche energy rating for inductive load switching. The 5-DFN (5x6) package with an exposed thermal pad achieves a junction-to-ambient thermal resistance that supports 150 W dissipation with adequate PCB copper area.
This part uses trench MOSFET technology with optimized cell pitch, balancing on-resistance, gate charge, and switching speed. The low RDS(on) reduces I^2R conduction loss, which is the chief dissipation source in DC load-switch, hot-swap, and battery-protection applications. The AEC-Q101 qualification and PPAP capability, combined with the NVM prefix, support automotive and industrial designs requiring strict change control.
Typical applications include high-side load switching in automotive ECUs, USB Type-C power-path management, motor-direction reversal circuits, and battery protection in 48V mild-hybrid and 12V lead-acid systems. The logic-level VGS(th) also makes it attractive for industrial PLC outputs and consumer hot-swap controllers.
When designing with this part, calculate steady-state dissipation as P = I^2 * RDS(on) and confirm that PCB copper area keeps junction temperature below 175C. Source-to-body reverse diode behavior must be considered for inductive loads that can push body-diode current during dead time, often requiring an external Schottky for hard-switched reverse-polarity protection.
This page synthesizes onsemi datasheet values, distributor pricing from DigiKey/Mouser/LCSC, AEC-Q101 cross-references, and drop-in alternatives into one engineering-ready reference not found on the manufacturer page alone.
Drop-in-Alternativen für NVMFS5113PLT1G – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NTMFS5113PLT1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NVMFS5113PLT3G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NVMFS5113PLWF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NVMFS5113PLT1G Grenzwerte & elektrische Eigenschaften
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TA=25C | 10 A |
| Continuous Drain Current (ID) at TC=25C | 64 A |
| On-Resistance RDS(on) typical at VGS=-10V | 14 mOhm |
| Power Dissipation at TA=25C | 3.8 W |
| Power Dissipation at TC=25C | 150 W |
| Gate Threshold Voltage VGS(th) | Logic Level (drive from 4V/5V logic) |
| Avalanche Energy Rated | Yes (per datasheet) |
| Gehäuse | 5-DFN (5x6) / 8-SOFL |
| Montageart | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55C to +175C |
| Automotive Qualification | AEC-Q101 Qualified, PPAP Capable (NVM prefix) |
NVMFS5113PLT1G Pin-Konfiguration
| Pin 1 | Source — Source connection (electrical node tied to load) |
| Pin 2 | Source — Source connection (parallel to pin 1) |
| Pin 3 | Source — Source connection; serves as thermal pad on bottom of package |
| Pin 4 | Gate — Logic-level gate drive input (drive low to turn on P-channel) |
| Pin 5 | Drain — Drain connection (typically tied to supply) |
| Pin 6 | Drain — Drain connection (parallel to pin 5) |
| Pin 7 | Drain — Drain connection (parallel to pin 5) |
| Pin 8 | Drain — Drain connection (parallel to pin 5) |
Sicherer Arbeitsbereich (DC, TJ=25C)
Typische Anwendungen
NVMFS5113PLT1G ist geeignet für 7 Anwendungs: Automotive High-Side Load Switch, USB Type-C Power Path Management, Battery Protection and Reverse Polarity, Motor Direction Reversal (H-Bridge High Side), Hot-Swap / Plug-In Card Power Management, Industrial PLC and Process-Control Outputs, LED Lighting Driver High-Side Switch.
Automotive High-Side Load Switch
The NVMFS5113PLT1G is well suited to high-side load switching in 12V automotive ECUs because its -60V VDS rating absorbs load-dump transients well above the 24V ISO 7637-2 pulse, and its 14 mOhm RDS(on) keeps I^2R conduction loss low at the 5-10 A typical ECU load. The AEC-Q101 PPAP qualification supported by the NVM prefix allows direct use in body-informable PEM and BCM modules. Placed between the 12V battery rail and the load, the logic-level VGS(th) lets a microcontroller GPIO pull the gate to ground to turn the switch on, eliminating the charge pump needed for N-channel high-side switches.
Empfohlen
USB Type-C Power Path Management
The NVMFS5113PLT1G's logic-level VGS(th) and 14 mOhm RDS(on) make it a strong candidate for USB Type-C VBUS load switch and reverse-current blocking roles. In a USB Type-C source application, it can sit between the 5V/3A supply and the VBUS pin to enable controlled attach-detach and OVP protection. The -60V VDS rating is overkill for a 5V rail but provides protection against ESD-induced surge transients when paired with a TVS, an advantage over lower-VDS P-channel parts.
Empfohlen
Battery Protection and Reverse Polarity
For 12V lead-acid or 48V mild-hybrid battery systems, the NVMFS5113PLT1G acts as a reverse-polarity and over-current protection FET when placed in series with the battery positive rail. Its 14 mOhm RDS(on) at 64 A TC means the part drops less than 1V even at 50 A surge, minimizing wasted power. The P-channel high-side topology means the gate can be driven low by a low-cost controller to disconnect the load during fault events, and the AEC-Q101 qualification supports automotive battery-management units (BMUs).
Empfohlen
Motor Direction Reversal (H-Bridge High Side)
In a brushed-DC H-bridge, the NVMFS5113PLT1G serves as the high-side switch on each half-bridge leg, paired with N-channel low-side FETs. Its P-channel topology eliminates the need for a bootstrap or charge-pump high-side driver, simplifying the gate drive circuitry. The 64 A TC continuous rating handles the locked-rotor current spike of small DC motors, and the avalanche energy rating absorbs the inductive kickback when the motor is commutated. The logic-level VGS(th) suits direct MCU GPIO control of bridge direction.
Empfohlen
Hot-Swap / Plug-In Card Power Management
In a -48V or 24V distributed-power hot-swap controller, the NVMFS5113PLT1G serves as the main power-interrupt FET that limits inrush current when a plug-in card is inserted live. Its 14 mOhm RDS(on) reduces the steady-state voltage drop on the backplane rail, and the -60V VDS margin handles the ringing that follows connector mating. The AEC-Q101 PPAP qualification is overkill for data-center hot-swap, but the part is rated attractive by NEC-48V telecom boards requiring industrial-grade reliability.
Empfohlen
Industrial PLC and Process-Control Outputs
The NVMFS5113PLT1G's logic-level drive and P-channel high-side topology simplify 24V industrial PLC output designs by removing the high-side gate driver and allowing direct logic-level gate control from the PLC's digital-output stage. Its -60V VDS handles the 24V industrial bus transient envelope with comfortable margin, and its 14 mOhm RDS(on) at 10 A continuous (TA) reduces heat in densely packed PLC chassis. The onsemi NVM-prefix automotive-grade quality system also benefits industrial customers requiring high reliability.
Empfohlen
LED Lighting Driver High-Side Switch
In 12V or 24V LED lighting driver circuits, the NVMFS5113PLT1G acts as the high-side PWM switch that delivers current to the LED string. Its logic-level VGS(th) allows direct PWM control from a microcontroller at audio-banded frequencies above 200 Hz, eliminating audible flicker. The 14 mOhm RDS(on) minimizes the I^2R loss at multi-amp LED currents, and the SO-8FL package supports compact down-light and strip-driver form factors where PCB copper is constrained.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NVMFS5113PLT1G – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NTMFS5113PLT1G | NVMFS5113PLT3G | NVMFS5113PLWF |
|---|---|---|---|---|
| Package | 5-DFN (5x6) / SO-8FL | 5-DFN (5x6) / SO-8FL - same | 5-DFN (5x6) / SO-8FL - same | 5-DFN (5x6) / SO-8FL with Wettable Flanks - same |
| Brand | onsemi | onsemi | onsemi | onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V |
| RDS(on) typical at VGS=-10V | 14 mOhm | 14 mOhm | 14 mOhm | 14 mOhm |
| Continuous ID at TC=25C | 64 A | 64 A | 64 A | 64 A |
| Power Dissipation at TC=25C | 150 W | 150 W | 150 W | 150 W |
| Gate Threshold (logic level) | Yes (4V/5V logic drive) | Yes (4V/5V logic drive) | Yes (4V/5V logic drive) | Yes (4V/5V logic drive) |
| Automotive (AEC-Q101 PPAP) | Yes (NVM prefix) | No (NT prefix) | Yes (NVM prefix) | Yes (NVM prefix) |
| Reel Quantity | 1500 (T1) | 1500 (T1) | 5000 (T3) | 1500 (T1) |
Wichtigste Unterscheidungsmerkmale
- NVM-prefix automotive-grade qualification with PPAP (vs. NTMFS5113PLT1G)
- Logic-level gate threshold for direct MCU GPIO drive (vs. Standard P-channel MOSFETs with 10V VGS(th))
- 14 mOhm RDS(on) in compact SO-8FL package (vs. Legacy TO-220 P-channel MOSFETs (e.g., IRF9540N at 200 mOhm))
Designhinweise
Estimated: at ID=10A (TA mounting) and RDS(on)=14 mOhm, steady-state conduction loss is P=I^2*R = 1.4W. With the SO-8FL theta_JA of approximately 50 C/W on a 1 square-inch copper pour, junction temperature rises about 70C above ambient, so the part is safe to 25C ambient and de-rates quickly at 85C industrial ambient. For continuous 30-50A operation, mount the SO-8FL thermal pad onto a 4+ square-inch copper flood or use a small clip-on heatsink. The 150W TC rating applies only when TC is held at 25C via direct heatsink mounting, which is impractical for most SMD designs.
Solder the SO-8FL exposed thermal pad (pin 3) directly to a PCB copper flood of at least 1 square inch on top, bottom, or both layers with thermal vias connecting them. Place gate-drive components within 5 mm of the gate pin to minimize the high-impedance gate trace pickup of switching noise. Use a 10 kohm gate-source pull-up resistor to keep the FET off when the MCU GPIO is high-impedance during reset, and add a 100 ohm gate series resistor to dampen gate-oscillation when the gate trace exceeds 10 mm.
Do not drive the gate above +20V or below -20V relative to source, even briefly - the gate oxide will be damaged. The body diode conducts in the reverse direction (source positive relative to drain) and is slow; for hard-switched reverse-polarity protection, add an external Schottky diode in parallel with the body diode. Inductive load switching (solenoids, motors) requires a flyback diode or TVS across the load - the part's avalanche rating is a safety margin, not a normal operating mode. Always check the latest onsemi datasheet for the 'W' (Wettable Flank) suffix variant if your design needs automated optical inspection.
Keep the source node (pins 1-3 and thermal pad) as a low-impedance plane, ideally with the high-current load path on the top layer above the source copper. The drain (pins 5-8) connects to the supply; route the drain with wide traces or a polygon to minimize parasitic inductance that causes voltage spikes during switching. The gate trace should be short, kept away from the drain/source switching nodes, and guarded by the source copper to minimize dv/dt-induced false turn-on, which is a common failure mode for P-channel high-side switches.
Compliance-Informationen
AEC-Q101 (automotive MOSFET standard, equivalent qualification for discrete semiconductors) per onsemi datasheet NVMFS5113PL. NVM prefix confirms PPAP capability. Halogen-free status not explicitly stated in distributor summaries.
