SKM75GB12T4 - 1200V 115A Half-Bridge IGBT4 Module | Semikron
Teilenummer: SKM75GB12T4 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 5 | $90.25 | $451,25 |
| 10 | $85.5 | $855,00 |
| 25 | $80.75 | $2.018,75 |
| 100 | $76 | $7.600,00 |
SKM75GB12T4 Übersicht
An IGBT module is an insulated-gate bipolar transistor assembly that integrates one or more power switching devices and freewheeling diodes on an isolated DCB ceramic substrate inside a molded housing. IGBT modules sit at the top of the power semiconductor hierarchy: IGBT -> power transistor -> power semiconductor -> power conversion system. They serve as the switching core of inverters, motor drives, UPS systems, and welders, where high blocking voltage and galvanic isolation from the heatsink are mandatory.
Key features include the IGBT4 fast trench-generation die, which balances low VCE(sat) with reduced turn-off energy for switching frequencies typical of industrial drives, and the CAL4 diode with soft recovery behavior that reduces voltage overshoot and EMI during commutation. The SEMITRANS 2 housing provides 3600 Vrms-class isolation, a solderable or screw-terminal layout (7-pin Case GB), and a flat baseplate for mounting on standard heatsinks. The half-bridge topology directly supports buck, boost, and PWM inverter legs.
Technically, the module is ESD-sensitive per IEC 60747-1 Chapter IX, and the datasheet is a 5-page manufacturer document covering static and dynamic characteristics, diode recovery data, and mechanical drawings.
Typical applications include AC motor drives and inverters, UPS output stages, welding power supplies, and industrial SMPS front ends operating from rectified 3-phase 400 V AC mains, where the 1200 V class provides sufficient margin.
A key design consideration is thermal management: dissipation is the sum of conduction and switching losses, so heatsink selection must reflect the actual PWM frequency and duty cycle using the datasheet loss curves.
This page synthesizes distributor availability, verified cross-reference alternatives, and practical design guidance beyond the manufacturer datasheet.
Drop-in-Alternativen für SKM75GB12T4 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SK 75 GB 12T4 T
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SKM75GB12V
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
AMM75GB12T4
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SKM75GD124D
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SKM75GB12T4 Grenzwerte & elektrische Eigenschaften
| Topologie | Half-bridge (dual IGBT with CAL4 diodes) |
| Collector-Emitter Voltage VCES | 1200 V |
| Continuous Collector Current IC | 115 A |
| Nominal Collector Current ICnom | 75 A |
| IGBT Technology | IGBT4 - 4th generation fast trench IGBT (Infineon) |
| Freewheeling Diode | CAL4 - 4th generation soft switching CAL-diode |
| Gehäuse | SEMITRANS 2, 7-pin Case GB |
| Package Style | Screw-down power module with isolated baseplate |
| ESD Classification | ESDS device per IEC 60747-1 Chapter IX |
| Mounting | Heatsink screw mount / terminal connections |
| Manufacturer Part Number (internal) | 22892010 |
| Datasheet Length | 5 pages |
SKM75GB12T4 Pin-Konfiguration
| Pin 1 | G1 — Gate of upper IGBT (terminal mapping per SEMITRANS 2 Case GB mechanical drawing - verify against datasheet drawing) |
| Pin 2 | E1 — Emitter of upper IGBT |
| Pin 3 | C1 (+DC) — Collector of upper IGBT - positive DC bus terminal |
| Pin 4 | AC (E1/C2 common) — Half-bridge output terminal (upper emitter / lower collector) |
| Pin 5 | C2 — Collector of lower IGBT - connected to AC output |
| Pin 6 | E2 (-DC) — Emitter of lower IGBT - negative DC bus terminal |
| Pin 7 | G2 — Gate of lower IGBT |
Sicherer Arbeitsbereich
Typische Anwendungen
SKM75GB12T4 ist geeignet für 6 Anwendungs: AC Motor Drives and Inverters, UPS Output and Battery Inverter Stages, Welding Power Supplies, Industrial SMPS and DC-DC Front Ends, Solar String Inverter Power Stacks, Motion and Servo Drive Regeneration Stages.
AC Motor Drives and Inverters
The SKM75GB12T4 fits variable-frequency drives for induction and PMSM motors on 3-phase 400 V AC mains, where the rectified DC bus sits near 565 V and the 1200 V rating leaves generous switching-margin headroom. Its half-bridge topology forms one inverter leg directly, so three modules complete a full three-phase output stage, while the 115 A continuous rating supports drive outputs in the tens of kW depending on modulation index and heatsink capacity. The IGBT4 fast trench die keeps turn-off energy low at typical 4-16 kHz drive PWM frequencies, and the CAL4 freewheeling diode's soft recovery limits voltage overshoot during commutation, easing snubber and EMI-filter design. Loss calculations should combine datasheet VCE(sat) conduction curves with switching-energy graphs at the chosen bus voltage and gate resistance.
Empfohlen
UPS Output and Battery Inverter Stages
In online double-conversion UPS systems, the SKM75GB12T4 serves in the DC/AC inverter bridge converting the battery or DC-link voltage to 230/400 V AC. The 1200 V class withstands bus transients during battery equalization and load steps, and the 75 A nominal / 115 A peak-capable current rating fits medium-power three-phase UPS output legs. Overload behavior benefits from the rugged trench IGBT4 cell structure and the CAL4 diode's soft recovery, which reduces reverse-recovery current spikes when the inverter commutates into nonlinear rectifier-front-end loads. Thermal cycling robustness of the SEMITRANS 2 DCB construction suits the frequent load transitions typical of UPS duty. Gate-drive design should include active Miller clamping and DESAT short-circuit detection for safe fault handling.
Empfohlen
Welding Power Supplies
Welding inverters impose high peak currents and hard load steps, and the SKM75GB12T4's 115 A continuous / high-overload trench IGBT4 die withstands these conditions in the primary bridge of arc-welding power sources. Running from a rectified 3-phase 400 V supply, the module switches at 20-40 kHz in resonant or hard-switched full-bridge arrangements built from two half-bridge modules. The CAL4 diode's soft recovery keeps ringing low during dead-time intervals, improving EMI compliance in workshop environments. Because welding duty cycles involve rapid current ramps, PCB and busbar layout must minimize stray inductance between the DC-link capacitors and the module C/E terminals to limit turn-off overshoot below the 1200 V rating. Forced-air heatsinking sized to datasheet loss curves maintains junction margins under 100% duty welds.
Empfohlen
Industrial SMPS and DC-DC Front Ends
High-power switch-mode power supplies and DC-DC converters for electroplating, hydrogen electrolysis, and battery chargers use the SKM75GB12T4 in phase-shifted full-bridge or half-bridge primary stages. Its 1200 V rating accommodates 400 V AC-derived bus rails with margin for surge events, while 115 A continuous current supports multi-kilowatt conversion per module. The fast trench IGBT4 generation achieves favorable turn-off energy at the 15-30 kHz frequencies typical of these converters, and the CAL4 diode handles transformer magnetizing and leakage current recovery softly, reducing secondary-side ringing. Designers should verify VCE(sat) at the actual operating junction temperature using the datasheet output-characteristic family, since conduction loss rises significantly from 25 C to 125 C and dominates total dissipation at low switching frequencies.
Empfohlen
Solar String Inverter Power Stacks
Grid-tied photovoltaic inverters built around a 3-phase 400/480 V AC grid use the SKM75GB12T4 for the DC/AC stage where the MPPT window (up to about 1000 V systems is covered by the 1200 V class with derating). The module's half-bridge arrangement lets designers scale the inverter bridge from three modules, and the 75 A nominal rating suits string-inverter power stacks in the 20-40 kW class with appropriate DC-link voltage and thermal design. IGBT4 trench technology provides the low switching energy needed for efficient operation near 16 kHz switching to reduce output-filter size, while the CAL4 diode limits reverse-recovery loss and conducted EMI into the LCL grid filter. Isolation of the SEMITRANS 2 package simplifies creepage/clearance compliance on the grid side.
Empfohlen
Motion and Servo Drive Regeneration Stages
Servo drives and hoist/travel axes that dissipate or recover braking energy employ the SKM75GB12T4 in the braking-chopper or active-front-end role. As a braking chopper, one IGBT of the half-bridge switches the braking resistor across the DC bus, and the 1200 V rating tolerates bus excursions above nominal during regeneration; the integrated CAL4 diode is not stressed in this configuration. As an AFE leg, both switches operate in PWM to shape line current, and the fast IGBT4 die supports the higher switching frequencies needed for low-distortion input currents. The SEMITRANS 2 package's screw terminals accept the busbar currents typical of multi-10-kW servo racks, and its isolated baseplate mounts directly on the drive's shared heatsink, simplifying the thermal stack.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SKM75GB12T4 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SK 75 GB 12T4 T | SKM75GB12V | AMM75GB12T4 | SKM75GD124D |
|---|---|---|---|---|---|
| Package | SEMITRANS 2 (7-pin Case GB) | SEMITRANS 2 - same | SEMITRANS 2 - same | SEMITRANS 2 - same | SEMITRANS 2 - same |
| Brand | Semikron (Semikron Danfoss) | Semikron | Semikron | AS Energi | Semikron |
| VCES Blocking Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Topology | Half-bridge (dual) | Half-bridge | Half-bridge | Half-bridge | Dual module variant |
| Terminal Finish | Standard | Tinned (T suffix) | Standard | Standard | Standard |
Wichtigste Unterscheidungsmerkmale
- IGBT4 4th-generation fast trench die (vs. SKM75GB12V)
- CAL4 soft-recovery freewheeling diode (vs. SKM75GB12V)
- Established OEM part with documented third-party equivalent (vs. AMM75GB12T4)
Designhinweise
Size the heatsink from total losses: conduction loss is approximately VCE(sat) * IC * duty cycle, and switching loss is (Eon + Eoff) * fsw, both read from the datasheet curves at your actual junction temperature and gate resistance. Estimated: at 75 A, a VCE(sat) near 2 V, 0.5 duty, and 10 kHz switching with 8 mJ combined energy per cycle, total losses approach 135 W per module, so a heatsink with roughly 0.1-0.2 C/W thermal resistance (forced air) keeps the junction below 125 C at 40 C ambient. Verify against the manufacturer curves, since these input values are estimates for illustration.
Minimize stray inductance between the DC-link capacitors and the module C1/E2 terminals. As a rule of thumb, keep the commutation loop below 30-50 nH; with 115 A turn-off and 100 nS-class IGBT4 turn-off times, every 100 nH of loop inductance can add a 100 V overshoot spike. Use laminated busbars or wide parallel PCB planes, place the DC-link film capacitor directly across the module DC terminals, and route gate-emitter driver connections as twisted pairs or adjacent traces to avoid gate ringing. The SEMITRANS 2 screw terminals support busbar mounting - do not substitute thin wire jumpers at full load.
The SKM75GB12T4 is an ESD-sensitive device per IEC 60747-1 Chapter IX, so handle at ESD-protected workstations and keep gate-emitter terminals shorted until the gate driver is connected. Never leave gate terminals floating: apply a negative gate-emitter bias (about -5 V to -8 V) or a low-impedance clamp during off-state to prevent parasitic turn-on from dv/dt across the Miller capacitance. Confirm gate resistance values against the datasheet switching-energy curves rather than copying values from other module families, because IGBT4 chips have faster switching than older generations and smaller RG may cause excessive overshoot or oscillation.
Compliance-Informationen
Verified data confirms ESDS classification per IEC 60747-1 Chapter IX. RoHS/REACH declarations not present in the provided data - obtain from the Semikron Danfoss product page (ID 22892010) for compliance files.
