SPP17N80C3XKSA1 - 800V 17A CoolMOS C3 MOSFET | Infineon
Teilenummer: SPP17N80C3XKSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.6701 | $2,67 |
SPP17N80C3XKSA1 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. Within the broader taxonomy, MOSFETs belong to discrete transistors, which sit under discrete semiconductors alongside diodes and thyristors; the CoolMOS superjunction family is a specialized MOSFET sub-family optimized for high breakdown voltages with markedly lower specific on-resistance (RDS(on) x area) than conventional planar MOSFETs. The C3 generation specifically reduces gate charge, output capacitance, and reverse-recovery charge relative to C2, enabling higher switching frequencies and smaller magnetics in offline SMPS designs.
Key features of the SPP17N80C3XKSA1 include an 800 V drain-source breakdown voltage, 17 A continuous drain current at 25 C case temperature, 208 W maximum power dissipation at Tc, low intrinsic drain-source on-resistance for the voltage rating, and fast body-diode behavior suitable for hard-switched bridge converters. The through-hole PG-TO220-3-1 package provides a robust mechanical footprint with a metal tab that can be bolted to a heatsink for thermal management.
Typical applications include switch-mode power supplies (SMPS) for telecom and server AC-DC front-ends, uninterruptible power supplies (UPS), solar inverters, welding equipment, and high-voltage industrial drives. The CoolMOS C3 series is well known for rugged avalanche capability and high dv/dt immunity, making it suitable for hard-switched PFC and half-bridge topologies.
When designing with this part, ensure the gate driver delivers at least 10 V Vgs for full enhancement and that snubber or RCD protection is considered for hard-switched bridge circuits. Heatsink selection must account for the 208 W power rating and thermal resistance of the TO-220 package.
This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, drop-in TO-220-3 equivalents, and practical design notes not consolidated in the manufacturer datasheet. All specifications are anchored to the Infineon SPA/SPP 17N80C3 datasheet and the CoolMOS C3 product family documentation.
Drop-in-Alternativen für SPP17N80C3XKSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SPA17N80C3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPA17N80C3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STP17N80C3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRFP17N80C3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
17N80C3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SPP17N80C3XKSA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS C3 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) at Tc | 17 A |
| Maximum Power Dissipation (PD) at Tc | 208 W |
| Technology | Superjunction (CoolMOS) |
| Gehäuse | PG-TO220-3-1 (through-hole) |
| Montageart | Through Hole |
| RoHS-Status | Compliant |
SPP17N80C3XKSA1 Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Drain — MOSFET drain (electrically connected to metal tab) |
| Pin 3 | Source — MOSFET source / power return |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
SPP17N80C3XKSA1 ist geeignet für 7 Anwendungs: Switch-Mode Power Supply (SMPS) PFC Stage, Telecom AC-DC Front-End Converter, Uninterruptible Power Supply (UPS) Inverter, Solar String Inverter, Industrial Welding Equipment, High-Voltage DC-DC Converter, Plasma Generator / Induction Heating.
Switch-Mode Power Supply (SMPS) PFC Stage
The SPP17N80C3XKSA1's 800 V VDS rating provides ample derating margin for 385 V PFC bus rails fed from universal-input 85-265 VAC, while the CoolMOS C3 superjunction architecture delivers low RDS(on) at high VDS compared to planar 800 V parts. Its fast switching and low Eoss reduce PFC switching losses, allowing higher switching frequencies and smaller boost inductors. The 17 A continuous ID rating comfortably supports 500 W-1 kW PFC stages with proper thermal design on the TO-220 tab.
Empfohlen
Telecom AC-DC Front-End Converter
In 48 V telecom rectifier front-ends (rectifier modules converting 230 VAC to -48 VDC), the SPP17N80C3XKSA1 serves as the primary-side switch in CCM/DCM PFC plus LLC or hard-switched half-bridge stages. The 800 V breakdown supports 385 V PFC bus with 50% safety margin, while 17 A continuous ID handles 1.5-3 kW rectifier power levels. CoolMOS C3's low Qg and Qoss reduce driver losses at 100-200 kHz switching frequencies typical of telecom brick converters.
Empfohlen
Uninterruptible Power Supply (UPS) Inverter
Online UPS systems in the 1-5 kVA range use the SPP17N80C3XKSA1 in the battery-to-AC inverter stage where low conduction loss is critical for battery runtime. The superjunction device's low RDS(on) at the 800 V class means lower I2R losses during inverter conversion, while the rugged body diode handles dead-time conduction. Its TO-220 package enables straightforward heatsink mounting inside the UPS enclosure.
Empfohlen
Solar String Inverter
In single-phase string inverters (1-5 kW residential), the SPP17N80C3XKSA1 is well-suited for the DC-DC boost stage and the DC-AC inverter bridge. Its 800 V rating handles the 600 V DC-link typical of European residential PV systems with margin for transient over-voltage, while 17 A ID covers 3-5 kW inverter power at typical switching frequencies of 16-50 kHz. CoolMOS C3's low Eoss is particularly valuable in resonant LLC and HERIC topologies.
Empfohlen
Industrial Welding Equipment
Welding power sources demand robust switches that handle high di/dt, occasional short circuits, and rugged thermal cycling. The SPP17N80C3XKSA1's superjunction technology and CoolMOS C3 ruggedness provide the avalanche capability needed for inverter-based MMA/MIG welders. The 17 A continuous rating supports 200-300 A welding output via the inverter transformer ratio, while the 800 V rating handles rectified 3-phase 480 VAC input with appropriate snubbing.
Empfohlen
High-Voltage DC-DC Converter
In 400 V-to-12 V or 600 V-to-48 V isolated DC-DC converters for EV traction auxiliaries or solar battery interfaces, the SPP17N80C3XKSA1 functions as the primary-side switch on the high-voltage bus. CoolMOS C3's low Qrr and fast body-diode recovery minimize dead-time losses in half-bridge and full-bridge topologies. The 17 A rating suits 1-2 kW converter power at typical 100 kHz switching frequencies.
Empfohlen
Plasma Generator / Induction Heating
Resonant inverters for plasma generators and induction heating operate at high frequency (50-500 kHz) and demand switches with low conduction and switching losses. The SPP17N80C3XKSA1's CoolMOS C3 silicon delivers the low Qg x RDS(on) figure of merit needed for efficient Class-D or Class-E resonant operation. Its 800 V rating handles resonant tank voltages that can swing above the DC bus due to QLC tank behavior, and 17 A current supports 5-15 kW heating power.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SPP17N80C3XKSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SPA17N80C3 | IPA17N80C3 | STP17N80C3 | IRFP17N80C3 | 17N80C3 |
|---|---|---|---|---|---|---|
| Package | PG-TO220-3-1 | PG-TO220 FullPAK | PG-TO220 FullPAK | TO-220-3 | TO-220-3 | TO-220-3 |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | Infineon (legacy IR) | Onsemi |
| Drain-Source Voltage (VDS) | 800 V | 800 V | 800 V | 800 V | 800 V | 800 V |
| Continuous Drain Current (ID) | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A |
| Power Dissipation (PD) | 208 W | 34 W (FullPAK, lower) | 34 W (FullPAK, lower) | 190 W (typ) | 208 W | 180-208 W |
| Technology | CoolMOS C3 (SJ) | CoolMOS C3 (SJ) | CoolMOS C3 (SJ) | MDmesh (SJ) | CoolMOS C3 (SJ) | SJ equivalent |
| Mounting Style | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole |
Wichtigste Unterscheidungsmerkmale
- CoolMOS C3 third-generation superjunction silicon (vs. Planar 800V MOSFET (e.g., IRFP460))
- Higher continuous drain current (17 A) at 800 V (vs. STP5NK90Z (900V/5A planar, ST))
- Through-hole TO-220-3 with metal tab for direct heatsink mounting (vs. SMD alternatives (e.g., IPA in D2PAK))
Designhinweise
Estimated: the PG-TO220-3-1 package has a typical junction-to-ambient thermal resistance of 62 C/W without heatsink. At a 5 W dissipation (e.g., 800V/6 mA leakage-limited), junction temperature climbs ~310 C - far above the 150 C limit. For continuous operation above 2 W, mount the tab to a heatsink with thermal compound. FullPAK variants like SPA17N80C3 have lower thermal mass but isolated tabs - trade off when selecting package.
Keep the gate-drive loop (gate-driver output to gate, gate to source return) area as small as possible - typically < 1 cm^2 - to minimize parasitic inductance that causes gate-oscillation and dv/dt-induced false turn-on. Place the gate-drive resistor (typically 10-47 ohm) close to the gate pin. Use a Kelvin source connection when the source lead inductance would otherwise limit switching speed.
Do not drive the gate with Vgs below 10 V - the CoolMOS C3 RDS(on) is specified at Vgs=10V and rises sharply below this threshold. Ensure the gate-driver delivers a clean 12-15 V plateau, not the +12 V rail directly, so transient droop during switching does not cause the MOSFET to operate in the linear region. Add a gate-source Zener clamp (15-18 V) to protect against gate over-voltage from Miller current.
CoolMOS C3 devices switch very fast (dV/dt can exceed 50 V/ns). To control EMI, add a small ferrite bead or RCD snubber across the drain-source. For half-bridge or full-bridge topologies, ensure proper dead-time (typically 200-500 ns) to prevent shoot-through but minimize body-diode conduction losses. Verify with a near-field probe and LISN during EMI pre-compliance.
Compliance-Informationen
RoHS compliant per Infineon product page and DigiKey listing. REACH status not stated in provided data. AEC-Q100 not applicable (industrial/consumer part, not automotive qualified).
