SQD50P06-15L_T4GE3 - 60V P-Channel 50A MOSFET TO-252 | Vishay
Teilenummer: SQD50P06-15L_T4GE3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.95 | $1,95 |
| 10 | $1.65 | $16,50 |
| 100 | $1.18 | $118,00 |
| 500 | $0.95 | $475,00 |
| 1.000 | $0.79 | $790,00 |
| 2.500 | $0.66 | $1.650,00 |
SQD50P06-15L_T4GE3 Übersicht
A P-Channel MOSFET is a voltage-controlled switch whose conduction channel is formed when a negative gate-to-source voltage (VGS) is applied relative to an N-type substrate. Unlike N-Channel MOSFETs, P-Channel devices allow the load to be tied to ground with the high-side switch referenced to the positive rail, simplifying circuits such as high-side load switches, reverse-battery protection, and half-bridge motor drivers. Within the broader taxonomy, the SQD50P06 sits in the hierarchy: P-Channel MOSFET → power MOSFET → discrete semiconductor → power management component. Its P-Channel polarity and TrenchFET construction give it inherent simplicity advantages over equivalent N-Channel high-side circuits, which require bootstrap or charge-pump gate drivers.
Key differentiating specifications include 100 % Rg (gate resistance) tested for predictable switching performance, 100 % UIS (unclamped inductive switching) tested for ruggedness against automotive inductive transients, operation to 175 °C junction temperature for under-hood environments, and AEC-Q101 automotive qualification. The TO-252AA package combines a compact PCB footprint with a high-dissipation tab, supporting continuous 50 A switching with appropriate copper-cooling area.
Typical applications for the SQD50P06-15L_T4GE3 include high-side load switches in automotive ECUs, motor-drive reverse-polarity protection, battery-management system (BMS) disconnect switches, and industrial solenoid or relay drivers. The -60 V rating also provides substantial margin against 24 V industrial bus transients and inductive kick events.
When designing with the SQD50P06, gate-drive considerations matter: confirm VGS_off bias (typically +5 V to +10 V) is sufficient to fully enhance the channel, and place a small gate-source resistor (10 kΩ–100 kΩ) to prevent unintended turn-on from dv/dt coupling. The TO-252 tab should be soldered to at least 1 square inch of copper for thermal relief, especially when switching at high duty cycles.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including a parametric comparison against other TO-252 P-Channel MOSFETs from competing vendors.
Drop-in-Alternativen für SQD50P06-15L_T4GE3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SQD50P06-15L_GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SUD50P06-15L-GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQD50P04-09L_T4GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NTF2955T1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IPD90P03P4L-04
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQD50P06-15L_T4GE3 Grenzwerte & elektrische Eigenschaften
| Transistortyp | P-Channel MOSFET |
| Technology | TrenchFET (silicon) |
| Drain-to-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TC=25C | -50 A |
| Power Dissipation (PD) at TC=25C | 136 W |
| On-Resistance (RDS(on)) at VGS=-10V | 15 mΩ (typical) |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C |
| Package Type | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Montageart | Surface Mount |
| Gate Resistance (Rg) Tested | 100 % tested |
| UIS (Avalanche) Tested | 100 % tested, single-pulse avalanche rated |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS-Status | Compliant |
| Tape and Reel Quantity | 2500 pieces (T4 suffix) |
SQD50P06-15L_T4GE3 Pin-Konfiguration
| Pin 1 | Gate (G) — Gate control input; drive between 0 V (off) and -10 V (full on) |
| Pin 2 | Drain (D) — Drain connection; internally bonded to the metal tab |
| Pin 3 | Source (S) — Source connection; reference for gate-drive voltage |
| Pin Tab | Drain (D) — Metal tab; internally connected to Pin 2 (Drain) for thermal dissipation and PCB heatsinking |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
SQD50P06-15L_T4GE3 ist geeignet für 7 Anwendungs: Automotive High-Side Load Switch, Reverse-Battery Protection, Battery Management System (BMS) Disconnect Switch, DC Motor Drive (Brushed), Industrial Solenoid and Relay Driver, Hot-Swap / In-Rush Current Limiter, Power ORing / Redundant Supply Switch.
Automotive High-Side Load Switch
The SQD50P06-15L_T4GE3's P-Channel polarity simplifies high-side switching because the load is tied to ground with the MOSFET on the positive rail. Its -60 V VDS rating handles 12 V/24 V automotive bus transients with margin, while the 15 mΩ RDS(on) at VGS=-10V minimizes conduction loss. AEC-Q101 qualification and 175 °C junction temperature rating ensure reliability under the hood. In a typical body-control-module circuit, the MOSFET sits between the battery and the load (lamp, solenoid, motor), with the gate driven by a microcontroller GPIO through a pull-up resistor. The 50 A continuous drain current supports high-current loads such as headlamp drivers and HVAC blowers.
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Reverse-Battery Protection
The SQD50P06-15L_T4GE3 is well-suited for reverse-battery protection circuits where it blocks DC current flow when the battery is connected backwards. Its P-Channel configuration means the body diode naturally conducts in the forward direction, and a gate-control circuit pulls the gate to GND (turning the MOSFET on) during normal operation. The -60 V VDS rating tolerates load-dump transients up to 40 V that occur in 12 V automotive systems. With 15 mΩ RDS(on), voltage drop is minimal even at 30 A continuous load current. The 100 % UIS (avalanche) rating protects against the inductive kick when a reverse-polarity event is suddenly interrupted.
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Battery Management System (BMS) Disconnect Switch
In a BMS, the SQD50P06-15L_T4GE3 functions as the main disconnect switch between the battery pack and the load/charger. Its 15 mΩ RDS(on) keeps conduction loss below 1 % at 20 A continuous discharge, preserving battery runtime. The -60 V rating accommodates 48 V nominal battery packs with substantial transient margin. AEC-Q101 qualification is essential for automotive traction batteries. The TO-252AA package allows the MOSFET to be mounted on the BMS PCB with the tab providing both electrical drain connection and thermal dissipation into the copper pour.
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DC Motor Drive (Brushed)
The SQD50P06-15L_T4GE3 can switch brushed DC motors up to 50 A in automotive applications such as power window, seat adjustment, and windshield wiper motors. Its 100 % UIS-tested avalanche rating handles the back-EMF generated when the motor is switched off. The P-Channel high-side configuration pairs with an N-Channel low-side MOSFET to form a half-bridge, enabling PWM speed control at 1 kHz to 25 kHz switching frequencies. The 15 mΩ RDS(on) keeps switching and conduction losses manageable, and the TO-252AA package provides enough thermal mass for moderate-duty-cycle motor drives.
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Industrial Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the SQD50P06-15L_T4GE3's -60 V VDS rating, which tolerates 24 V industrial bus transients and inductive kick when de-energizing solenoids. The 50 A continuous drain current supports large contactors and hydraulic solenoid valves. The P-Channel configuration simplifies the drive circuit - a logic-level LOW signal from a microcontroller turns the MOSFET on via a pull-up resistor to the positive rail. The 100 % avalanche rating protects against the inductive flyback voltage when the solenoid field de-energizes.
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Hot-Swap / In-Rush Current Limiter
The SQD50P06-15L_T4GE3 can be used as a hot-swap MOSFET to limit in-rush current when a load card is inserted into a live backplane. By driving the gate with a controlled ramp (via an RC network or active gate driver), the MOSFET transitions from cutoff to full enhancement gradually, limiting di/dt and the resulting voltage drop on the backplane. The -60 V rating handles -48 V telecom bus voltages, while the 50 A continuous rating supports hot-swap of high-power cards. The 15 mΩ RDS(on) keeps steady-state voltage drop low.
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Power ORing / Redundant Supply Switch
The SQD50P06-15L_T4GE3 supports power-ORing applications where two redundant supplies feed a common load. The P-Channel MOSFET's body diode naturally conducts when one supply is offline, and the gate-control circuit turns the MOSFET on when its source voltage is higher than the other supply. The -60 V VDS rating handles -48 V telecom input buses with margin. The 15 mΩ RDS(on) keeps conduction loss low even at 30 A load currents, and the TO-252AA package enables compact, dense PCB designs in server and telecom equipment.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SQD50P06-15L_T4GE3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SQD50P06-15L_GE3 | SUD50P06-15L-GE3 | SQD50P04-09L_T4GE3 | NTF2955T1G | IPD90P03P4L-04 |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology | onsemi | Infineon |
| VDS (Drain-Source Voltage) | -60 V | -60 V | -60 V | -40 V | -60 V | -30 V |
| Continuous Drain Current (ID) | -50 A | -50 A | -50 A | -50 A | -1.8 A | -90 A |
| RDS(on) at VGS=-10V | 15 mΩ | 15 mΩ | 15 mΩ | 9 mΩ | 180 mΩ | 4 mΩ |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| Max Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 150 °C | 175 °C |
Wichtigste Unterscheidungsmerkmale
- 100 % Avalanche (UIS) Tested (vs. Generic P-Channel MOSFETs without UIS testing)
- Higher Voltage Rating with Same RDS(on) (vs. SQD50P04-09L_T4GE3)
- AEC-Q101 Qualified with 175 °C Tj (vs. NTF2955T1G (onsemi, 150 °C max))
Designhinweise
Estimated: At continuous 30 A drain current with RDS(on) = 15 mΩ, conduction loss is I²R = 30² × 0.015 = 13.5 W. With TO-252AA θJA ≈ 50 °C/W on a 1 square inch copper pour, junction temperature rises approximately 675 °C above ambient - clearly the device will derate severely. For continuous operation above 15 A, mount the tab to at least 4 square inches of copper, or use a small clip-on heatsink to keep Tj below 150 °C at 85 °C ambient.
The TO-252AA tab is electrically connected to the drain. Solder the tab to a copper pad that is electrically isolated from the rest of the circuit only if the drain is meant to float - in this P-Channel device the drain is at battery/positive potential. Recommended copper pour: at least 1 square inch at the tab for thermal dissipation, with multiple thermal vias to inner copper planes. Use solder paste stencil apertures designed for TO-252 land patterns to ensure reliable solder joint formation.
Critical pitfalls: (1) Forgetting that P-Channel MOSFETs require VGS to be NEGATIVE relative to source for full enhancement - a logic-level HIGH on the gate will turn the device OFF. (2) Failing to add a gate pull-up resistor (10 kΩ–100 kΩ) to keep the MOSFET OFF when the MCU GPIO is high-impedance during reset or startup. (3) Exceeding avalanche energy ratings by switching inductive loads without a flyback diode or TVS clamp. (4) Using a heatsink that shorts the drain tab to chassis ground, which can create ground loops or short the battery to chassis in automotive applications.
Gate-drive traces should be short and direct, with a small gate-series resistor (10 Ω–100 Ω) to dampen ringing from gate-source capacitance combined with stray inductance. Place a 100 kΩ gate-source resistor directly across the gate and source pins to ensure the MOSFET stays OFF if the gate driver is disconnected. Keep high-current drain/source traces wide (≥2 mm per ampere) to minimize voltage drop and copper heating. Decoupling capacitors on the load side should be close to the MOSFET source pin for switching applications.
Compliance-Informationen
AEC-Q101 qualified (automotive grade, not AEC-Q100 which is for ICs). RoHS and REACH compliant per Vishay product page. Halogen-free per Vishay environmental compliance documents.
