SQD50P08-25L_GE3 - 80V P-Ch 50A Automotive MOSFET | Vishay
Teilenummer: SQD50P08-25L_GE3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.95 | $1,95 |
| 10 | $1.62 | $16,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.95 | $475,00 |
| 1.000 | $0.82 | $820,00 |
| 3.000 | $0.71 | $2.130,00 |
SQD50P08-25L_GE3 Übersicht
A P-Channel MOSFET (PMOS) is a type of field-effect transistor in which the channel is formed by holes rather than electrons. P-Channel MOSFETs are commonly employed as high-side switches in load-switch, reverse-battery protection, and H-bridge motor drive circuits. Within the broader taxonomy, this device sits at: power MOSFET -> discrete semiconductor -> semiconductor. As a P-Channel device, it turns ON when its gate is pulled below the source by approximately 10 V, enabling simple low-side gate drive when the load sits on the low side of the supply.
Key differentiating specifications include a maximum on-resistance of 25 mΩ at VGS = -10 V, an operating junction temperature range up to +175 °C, and a low thermal resistance path via the DPAK tab to the PCB copper pour. The part supports avalanche operation (UIS tested) and is halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. Its TrenchFET® silicon technology minimizes conduction losses while sustaining high peak currents during inrush or motor stall events.
Architecturally, the device uses Vishay's TrenchFET® process, where a vertical trench filled with gate polysilicon shortens the channel length and dramatically reduces RDS(on) per unit area. The result is a small DPAK-outline part that can switch -50 A continuously with proper PCB copper heat-sinking. The die is rated for 175 °C junction operation, giving significant thermal margin above typical automotive under-hood ambient temperatures.
Typical applications include automotive load switching, high-side switching in 12 V/24 V systems, reverse-battery protection, motor drive H-bridges (high-side), and power OR-ing. The wide -80 V rating also supports industrial 48 V systems with adequate transient headroom for inductive loads.
When designing with this part, ensure that the PCB copper area beneath the DPAK tab provides at least 1 square inch of 2-oz copper to keep the junction temperature below 150 °C at full rated current. A 10 V gate drive is required for guaranteed RDS(on); logic-level microcontrollers (3.3 V) cannot drive this part directly and require a gate driver.
This page synthesizes AEC-Q101 compliance evidence, Pin Design verification, drop-in alternatives from Vishay's same family, and practical PCB thermal design guidance not collected in the manufacturer datasheet.
Drop-in-Alternativen für SQD50P08-25L_GE3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SQD50P08-25L_GE3
✅ Drop-In✓ Auf Lager
$0.71 / Stück
Datenblatt ansehen →SUD50P08-25L
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQD50P06-15L_GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQJ50P08-25L
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQD50P08-25L_GE3 Grenzwerte & elektrische Eigenschaften
| Polarity | P-Channel |
| VDS (Drain-Source Voltage) | -80 V |
| VGS (Gate-Source Voltage) | ±20 V |
| Continuous Drain Current (TC) | -50 A |
| Power Dissipation (TC) | 136 W |
| RDS(on) Max at VGS = -10 V | 25 mΩ |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C |
| Technology | TrenchFET® (Silicon) |
| Gehäuse | TO-252 (DPAK) |
| Montageart | Surface Mount |
| AEC-Q101 Qualification | Qualified |
| RoHS Compliance | Compliant (Directive 2002/95/EC) |
| Halogenfrei | Yes (per IEC 61249-2-21) |
| UIS (Unclamped Inductive Switching) Tested | 100 % Rg and UIS tested |
| Configuration | Single |
SQD50P08-25L_GE3 Pin-Konfiguration
| Pin 1 | Gate — Gate control input; pull below source by ≥10V to turn ON (P-Channel enhancement mode) |
| Pin 2 | Drain — Drain terminal; connected to load in high-side switching configuration |
| Pin 3 | Source — Source terminal; connected to supply rail in high-side P-Channel switching; tab is electrically connected to source |
| Pin Tab | Source (Tab) — DPAK metal tab electrically connected to Source; provides thermal path to PCB copper pour |
Sicherer Arbeitsbereich (DC) — TrenchFET® P-Channel 80V
Typische Anwendungen
SQD50P08-25L_GE3 ist geeignet für 6 Anwendungs: Automotive 12 V / 24 V High-Side Load Switch, Reverse-Battery Protection Circuit, H-Bridge High-Side Switch for DC Motors, Industrial 48 V Bus Hot-Swap / OR-ing, Power Distribution Module (PDM) High-Side Switch, Battery Disconnect and Isolation Switch.
Automotive 12 V / 24 V High-Side Load Switch
The SQD50P08-25L_GE3's P-Channel polarity, -80 V VDS rating, and 25 mΩ RDS(on) at VGS = -10 V make it ideal for high-side load switching in 12 V and 24 V automotive body and chassis domains. Placed between the battery feed and the load (lamp, solenoid, motor), the PMOS turns ON when its gate is pulled to ground through a pull-down resistor, and OFF when pulled up to the source. The 80 V rating provides substantial transient headroom for load-dump pulses per ISO 7637-2. Compared to a PNP bipolar solution, the MOSFET dissipates far less power (P = I²·RDS(on) ≈ 31 W at 35 A vs ~12 W at the same current with proper drive), simplifying thermal design.
Empfohlen
Reverse-Battery Protection Circuit
The SQD50P08-25L_GE3 is well-suited for reverse-battery protection in automotive ECUs where a P-Channel MOSFET sits in the high-side path between the battery and the downstream load. Under normal polarity, the gate is pulled to ground through a Zener-resistor network, and the PMOS conducts with 25 mΩ RDS(on), minimizing voltage drop and dissipation. During a reverse-polarity event, the gate goes up to drain to source, the channel turns OFF, and the load is protected. The -80 V VDS rating tolerates the inductive kick of downstream motors at turn-off, while the 50 A continuous rating supports starter-assisted accessory loads during engine cranking.
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H-Bridge High-Side Switch for DC Motors
In an H-bridge, the SQD50P08-25L_GE3 serves as the high-side switch on each leg of a brushed DC motor driver, paired with N-Channel low-side MOSFETs. The P-Channel high-side device simplifies gate drive because the source floats up and down with the motor terminal, and the gate only needs to swing between ground and the supply to fully enhance or deplete the channel. The 25 mΩ RDS(on) limits conduction loss during PWM operation, and the 136 W power dissipation rating provides thermal margin for stall-current transients. The AEC-Q101 qualification is essential for under-hood motor applications such as throttle, EGR, and variable-displacement AC compressor control.
Empfohlen
Industrial 48 V Bus Hot-Swap / OR-ing
The -80 V VDS rating of the SQD50P08-25L_GE3 provides comfortable margin for industrial 48 V telecom and battery-backed systems, where transient surges can reach 60-70 V. As an OR-ing device in redundant power architectures, the PMOS is placed in series with each supply rail; its body diode carries momentary current during switch-over while the channel turns ON. The low RDS(on) of 25 mΩ minimizes voltage drop and heat dissipation, while the 175 °C junction rating and UIS-tested avalanche capability absorb the energy stored in output inductors if a supply is suddenly disconnected.
Empfohlen
Power Distribution Module (PDM) High-Side Switch
Within an automotive Power Distribution Module, the SQD50P08-25L_GE3 functions as a smart high-side switch for distributing battery voltage to multiple downstream fuses or loads. Its AEC-Q101 qualification, halogen-free / RoHS compliance, and 175 °C junction rating make it acceptable for under-hood PDMs where ambient temperatures exceed 125 °C. The 50 A continuous rating covers typical front-PDM channels (headlamps, heated windshield, cooling fan), and the 100 % UIS-tested avalanche rating provides robustness when switching off inductive loads like solenoids and motor windings.
Empfohlen
Battery Disconnect and Isolation Switch
In electric vehicle and industrial battery-pack designs, the SQD50P08-25L_GE3 can serve as a low-voltage battery disconnect or service isolation switch, where its P-Channel topology places the load on the source side and the gate only needs to be pulled down to a small negative voltage to turn ON. The 80 V VDS rating exceeds typical 12 V / 24 V / 48 V battery nominal voltages, providing margin for transient overvoltages during regenerative braking. The 50 A continuous rating supports service-disconnect applications; for higher currents, parallel multiple SQD50P08-25L_GE3 devices with source-side ballast resistors to balance current sharing.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SQD50P08-25L_GE3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SQD50P08-25L | SUD50P08-25L | SQD50P06-15L_GE3 | SQJ50P08-25L |
|---|---|---|---|---|---|
| Brand | Vishay | Vishay | Vishay | Vishay | Vishay |
| Package | TO-252 (DPAK) | TO-252 (DPAK) - same | TO-220 (through-hole) | TO-252 (DPAK) - same | TO-252 family variant |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | -80 V | -80 V | -80 V | -60 V (-25%) | -80 V |
| Continuous Drain Current (TC) | -50 A | -50 A | -50 A | -50 A | -50 A |
| RDS(on) Max at VGS = -10 V | 25 mΩ | 25 mΩ | 25 mΩ | 15 mΩ (-40%) | 25 mΩ |
| AEC-Q101 Qualification | Qualified | Qualified | Qualified | Qualified | Qualified |
Wichtigste Unterscheidungsmerkmale
- Automotive-grade qualification with 100% Rg and UIS testing (vs. SQD50N06-09L_GE3)
- Higher VDS rating (-80V) than the 60V P-Channel variant (vs. SQD50P06-15L_GE3)
- P-Channel polarity enables simple high-side drive without bootstrap (vs. N-Channel equivalents in same DPAK)
Designhinweise
The SQD50P08-25L_GE3 dissipates 136 W at TC = 25 °C, but the practical continuous current is limited by PCB heatsinking. Estimated: at 30 A continuous with 25 mΩ RDS(on), conduction loss ≈ 22.5 W must be removed via the DPAK tab to PCB copper. With 1 square inch of 2-oz copper, expect θJA ≈ 50 °C/W, giving a 25 °C temperature rise above ambient - comfortable for 85 °C ambient operation. At 50 A full rating, recommend a stamped aluminum heatsink or 4+ square inches of 2-oz copper to maintain junction below 150 °C.
The SQD50P08-25L_GE3 is a P-Channel enhancement-mode MOSFET and requires VGS of -10 V (gate pulled below source) to achieve the specified 25 mΩ RDS(on). A common mistake is attempting to drive it directly from a 3.3 V or 5 V microcontroller GPIO: the gate will not reach the proper enhancement voltage (the GPIO pulls to 0 V, not -10 V), resulting in partially-on operation with much higher effective RDS(on), excessive heating, and possible thermal runaway. Use a gate driver, charge pump, or simple pull-down transistor driven by the GPIO to swing VGS from 0 V to -10 V relative to source.
For the DPAK (TO-252) package, the central metal tab is electrically tied to the source terminal and serves as the primary thermal path. Layout must include a thermal copper pour directly under the tab, with thermal vias to an inner plane for additional spreading. Place input bypass capacitors (10 µF / 25 V ceramic minimum) close to the drain and source pins to minimize parasitic inductance during switching. Keep gate-drive traces short and away from drain-trace high dv/dt nodes to prevent false triggering via Miller capacitance.
In high-side P-Channel switching, the gate-drive loop (gate driver → Rgate → MOSFET gate → MOSFET source → back to driver ground) carries the fastest dv/dt and must be minimized to avoid parasitic turn-on. Keep gate trace width ≥0.3 mm and length ≤10 mm where possible. Place a 10 kΩ pull-up resistor from gate to source to keep the MOSFET OFF during controller reset or power-up transients; this prevents inrush into the load before firmware assumes control of the GPIO.
Compliance-Informationen
AEC-Q101 qualified per Vishay product page. Halogen-free per IEC 61249-2-21. RoHS compliant per Directive 2002/95/EC. 100% Rg and UIS tested. AEC-Q100 (automotive IC standard) is not applicable; the correct automotive standard for discrete MOSFETs is AEC-Q101.
