SQJ431AEP - 200V P-Channel MOSFET 9.4A | Vishay Siliconix
Teilenummer: SQJ431AEP ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.04 | $1.020,00 |
| 1.000 | $1.82 | $1.820,00 |
SQJ431AEP Übersicht
A P-Channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) in which the channel conductivity is carried by holes rather than electrons. P-Channel devices simplify high-side switching circuits because their source is connected to the supply rail and turning the device on only requires pulling the gate toward ground. Within the broader taxonomy, P-Channel MOSFETs are a subtype of power MOSFETs, which in turn belong to the discrete semiconductor family and ultimately to power management electronics. This hierarchy is useful when mapping the SQJ431AEP into system block diagrams: discrete semiconductor -> MOSFET -> P-Channel MOSFET -> TrenchFET -> automotive-grade power switch.
Key features of the SQJ431AEP include a 200 V drain-source breakdown voltage, 9.4 A continuous ID at 25 °C case temperature, low RDS(on) per the part datasheet, a Logic-level capable gate threshold, and 100 % avalanche (UIS) tested construction. The AEC-Q101 qualification means the part has passed automotive-grade reliability stress tests including HTRB, HTGB, temperature cycling, and H3TRB, distinguishing it from commercial-only MOSFETs that share the same package. The PowerPAK SO-8 footprint delivers a much lower thermal resistance than a standard SO-8, enabling the 68 W dissipation figure.
The SQJ431AEP's combination of 200 V rating and automotive qualification targets load switching, reverse-polarity protection, and high-side driver roles in 12 V and 24 V automotive systems, as well as industrial motor drive stages and battery management hot-swap paths. Designers favor P-Channel parts here to simplify the gate drive circuitry when the load must sit on the high side. Compared to N-Channel equivalents, P-Channel devices trade slightly higher RDS(on) for simpler drive logic, which is often worth the loss in 12 V-24 V systems.
When laying out the PCB, place the source pad directly on a copper pour that connects to the supply rail and use multiple thermal vias under the exposed pad to pull heat into the inner planes. Always check the safe operating area at the intended switching frequency and worst-case load current before committing to the design.
Drop-in-Alternativen für SQJ431AEP – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
SQJ431AEP-T1_GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQJ431EP
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SQJ431EP-T1_GE3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
SQJ431AEP Grenzwerte & elektrische Eigenschaften
| Manufacturer | Vishay Siliconix |
| Part Number | SQJ431AEP |
| Transistortyp | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | -200 V |
| Continuous Drain Current (ID) | 9.4 A (Tc) |
| Power Dissipation (PD) | 68 W (Tc) |
| On-Resistance (RDS(on)) | 0.315 ohm (per datasheet) |
| Betriebstemperaturbereich | -55 °C to +175 °C |
| Gehäuse | PowerPAK SO-8 (Surface Mount) |
| Montageart | Surface Mount |
| Technology | TrenchFET |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche (UIS) Tested | 100 % Rg and UIS tested |
| RoHS Compliance | Compliant |
| Halogenfrei | Yes (per Vishay product page) |
SQJ431AEP Pin-Konfiguration
| Pin 1 | Source — Source terminal (P-Channel MOSFET) |
| Pin 2 | Source — Source terminal (P-Channel MOSFET) |
| Pin 3 | Source — Source terminal (P-Channel MOSFET) |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Drain — Drain terminal (P-Channel MOSFET) |
| Pin 6 | Drain — Drain terminal (P-Channel MOSFET) |
| Pin 7 | Drain — Drain terminal (P-Channel MOSFET) |
| Pin 8 | Drain — Drain terminal (P-Channel MOSFET) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
SQJ431AEP ist geeignet für 7 Anwendungs: Automotive High-Side Load Switch, Reverse-Polarity Protection Block, Industrial 24V Hot-Swap Controller Switch, Battery Management Hot-Swap Path, Motor Driver Half-Bridge High-Side Switch, Power Supply OR-ing / Redundancy Switch, Solid-State Relay Output Stage.
Automotive High-Side Load Switch
The SQJ431AEP's 200 V VDS rating and 9.4 A continuous ID make it ideal for high-side load switching in 12 V and 24 V automotive systems. Placed between the battery rail and the load (lamp, solenoid, motor), its P-Channel polarity simplifies the gate drive because turning on only requires pulling the gate near ground - no charge pump or bootstrap needed. The 175 °C junction rating and AEC-Q101 qualification handle under-hood thermal stress, while the 8x safety margin over 24 V load-dump transients (typically 35-40 V) ensures reliable clamping without avalanche breakdown during jump-start and inductive kick events.
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Reverse-Polarity Protection Block
The SQJ431AEP serves as the active P-Channel reverse-polarity protection MOSFET in automotive ECUs, where it replaces a Schottky diode to cut conduction loss from roughly 500 mW to under 100 mW at 1 A loads. Wired source-to-battery and drain-to-load, the part naturally blocks reverse current when VGS = 0; an N-Channel companion and zener clamp drive the gate active during normal operation. The 200 V rating tolerates jump-start transients and inductive kickback, while AEC-Q101 qualification is mandatory for OEM acceptance in safety-relevant body and chassis modules.
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Industrial 24V Hot-Swap Controller Switch
In 24 V industrial hot-swap and OR-ing circuits, the SQJ431AEP carries the inrush and steady-state current to a backplane card while the 200 V rating provides margin against transient events common in factory environments. Its 9.4 A continuous ID comfortably drives motor controllers and sensor clusters, and the 0.315 ohm RDS(on) keeps dissipation under 3 W at 3 A. The PowerPAK SO-8 footprint fits standard SO-8 land patterns with enhanced thermal performance via the exposed pad, making it ideal for dense industrial backplanes where a standard SO-8 would overheat.
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Battery Management Hot-Swap Path
The SQJ431AEP is well-suited to the hot-swap path between a battery pack and a Battery Management System (BMS), where it must carry pack-level current while surviving inrush into bulk capacitors. Its 200 V VDS easily covers 48 V mild-hybrid battery rails and 24 V truck systems, while the P-Channel orientation lets the BMS pull the gate to ground through a small signal device to enable the path. AEC-Q101 qualification supports automotive BMS deployments, and the 175 °C Tj rating tolerates the warm ambient found inside battery enclosures.
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Motor Driver Half-Bridge High-Side Switch
As the high-side switch in a brushed DC or low-side-controlled motor driver, the SQJ431AEP simplifies gate drive by eliminating the bootstrap circuit required by N-Channel high-side MOSFETs. Its 9.4 A ID rating covers small to medium DC motors found in seat adjusters, window lifts, and HVAC blowers, while 200 V VDS handles the inductive kickback when the motor is commutated. AEC-Q101 qualification and the wide -55 °C to +175 °C junction range make it tolerant of the thermal cycling experienced in door-module and under-hood motor applications.
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Power Supply OR-ing / Redundancy Switch
In redundant 12 V or 24 V power supply OR-ing topologies, two SQJ431AEP devices form the active OR-ing elements that prevent back-feeding between supplies. The P-Channel orientation means the body diode naturally conducts during start-up until the controller activates the FET, and the 200 V VDS rating provides extraordinary margin over 24 V nominal rails. The AEC-Q101 qualification makes the part suitable for server-room and telecom 48 V redundancy in industrial environments, where automotive-grade reliability is desired.
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Solid-State Relay Output Stage
The SQJ431AEP can replace mechanical relays in automotive body-control modules where silent, fast, and bounce-free switching is required for solenoids, lamps, or heating elements. At 9.4 A continuous ID it drives most body-control loads directly, and the 200 V VDS protects against the inductive kickback of solenoids. AEC-Q101 and the PowerPAK SO-8 footprint make it a drop-in upgrade path for next-generation solid-state relay designs where relay contact wear would otherwise be a maintenance issue.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für SQJ431AEP – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | SQJ431AEP-T1_GE3 | SQJ431EP | SQJ431EP-T1_GE3 |
|---|---|---|---|---|
| Package | PowerPAK SO-8 | PowerPAK SO-8 - same | PowerPAK SO-8 - same | PowerPAK SO-8 - same |
| Brand | Vishay Siliconix | Vishay Siliconix - same | Vishay Siliconix - same | Vishay Siliconix - same |
| Drain-Source Voltage (VDS) | -200 V | -200 V | -200 V | -200 V |
| Continuous Drain Current (ID) | 9.4 A | 9.4 A | 12 A (per third-party listing) | 12 A (per third-party listing) |
| AEC-Q101 Qualified | Yes | Yes | No (commercial grade) | No (commercial grade) |
| 100% Rg and UIS Tested | Yes | Yes | No | No |
| Halogen-Free | Yes (per product page) | Yes | Varies by finish code | Yes |
| Junction Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 qualified with 100 % Rg and UIS lot testing (vs. SQJ431EP)
- 200 V VDS rating provides 8x safety margin over 24 V automotive rails (vs. Standard 40 V-100 V automotive MOSFETs)
- Halogen-free, RoHS-compliant finish available in -GE3 suffix (vs. Legacy SnPb finishes)
Designhinweise
The PowerPAK SO-8 package exposes a thermal pad that must be soldered to a copper pour with multiple thermal vias to achieve the rated 68 W power dissipation. Estimated: at 9.4 A continuous drain current with RDS(on) of 0.315 ohm, full-load conduction loss is roughly 9.4 x 9.4 x 0.315 ≈ 28 W - confirm with the official Vishay SOA curves before finalizing layout. Without sufficient PCB copper, junction temperature can exceed 175 °C even at moderate loads.
Land pattern should follow Vishay's PowerPAK SO-8 recommended footprint with a copper pour under the exposed pad sized at least 1 square inch on the top layer and stitched with 0.3 mm thermal vias to inner ground planes. Use a star-ground connection for the gate return to avoid coupling switching transients into the gate drive. Place gate-drive components within 5 mm of the gate pin to minimize parasitic inductance.
Do not exceed VGS(max) of ±20 V during transient events; add a gate-source zener or TVS clamp if the gate driver can overshoot. The 200 V VDS rating is absolute maximum - design for at least 80 % derating in 24 V automotive systems to handle load-dump transients. Always verify continuous ID at the actual case temperature, not the 25 °C Tc rating, because power dissipation drops linearly to zero at 175 °C Tj.
Compliance-Informationen
AEC-Q101 automotive qualified per Vishay product page. Halogen-free and RoHS compliant per the -GE3 finish code. 100 % Rg and UIS tested on every production lot.
