W989D6DBGX6I - 512Mbit Mobile LPSDR SDRAM x16 166MHz | Winbond
Teilenummer: W989D6DBGX6I ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $10.23 | $10,23 |
| 10 | $9.21 | $92,10 |
| 100 | $7.85 | $785,00 |
| 500 | $6.94 | $3.470,00 |
| 1.000 | $6.1 | $6.100,00 |
W989D6DBGX6I Übersicht
Mobile LPSDR SDRAM is a derivative of the standard SDRAM specification optimized for handheld and portable applications. It is a synchronous dynamic random-access memory, meaning it stores each bit in a separate capacitor inside an array of memory cells, and is refreshed periodically to retain data. Compared with standard SDRAM, LPSDR adds partial-array refresh, temperature-compensated self-refresh, and a deep power-down mode, which dramatically reduce the average current draw in standby. Architecturally LPSDR belongs to the SDRAM family, which in turn is part of the volatile memory hierarchy below SRAM and above NOR/NAND flash in cost per bit.
Key features of the W989D6DBGX6I include a x16 data interface, four internal banks for concurrent operation, programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, and on-chip temperature compensation for self-refresh current. The VFBGA-54 (8x9) package measures only 8 mm x 9 mm with a 0.8 mm ball pitch, making it suitable for space-constrained PCB layouts where thin-profile memory stacking is required. The device operates across the industrial -40C to +85C temperature range, designated by the trailing "I" suffix in the MPN.
Typical applications for the W989D6DBGX6I include smartphone baseband buffers, wearable and smartwatch frame buffers, portable media player RAM, automotive infotainment working memory, industrial HMI panels, and IoT edge devices that need 32 MB of low-power working RAM. The 1.8V VDDQ/JEDEC-compliant LPSDR interface allows direct connection to common application processors and SoCs that expose an LPSDR/LPDDR controller.
When designing with the W989D6DBGX6I, observe the JEDEC LPSDR PCB layout guidelines: keep the 16 data lines (DQ0-DQ15), clock (CLK), clock-enable (CKE), and the command/address bus length-matched within ±25 mil, place a 0.1 µF decoupling capacitor per VDD pin within 100 mil of the ball, and reserve a continuous ground plane beneath the package. The partial-array self-refresh register must be configured during initialization to achieve the lowest standby current in always-on applications.
This page synthesizes distributor pricing, drop-in alternatives within the same VFBGA-54 footprint, and practical PCB design notes that go beyond the bare datasheet content.
Drop-in-Alternativen für W989D6DBGX6I – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit W989D6DBGX6I (gleiche Bauform und Footprint) – abweichend in MSL Level, Memory Type, Organization, Package, Process Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
W989D6DBGX6E
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
W989D6DBGX6I-TR
✅ Drop-In✓ Auf Lager
$1.18 / Stück
Datenblatt ansehen →W986D6DBGX6I
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
W989D6DBGX6I
✅ Drop-In✓ Auf Lager
$6.1 / Stück
Datenblatt ansehen →W989D6DBGX6I Grenzwerte & elektrische Eigenschaften
| Speichertyp | Mobile LPSDR SDRAM |
| Memory Density | 512 Mbit (32M x 16) |
| Speicherorganisation | 32M words x 16 bit |
| Datenbusbreite | 16 bit |
| Maximale Taktfrequenz | 166 MHz |
| Access Time | 5 ns |
| Supply Voltage VDD | 1.8 V (typ) |
| Schnittstellentyp | Parallel, LVCMOS |
| Number of Banks | 4 |
| CAS-Latenz | Programmable 2 or 3 |
| Burst Length | 1, 2, 4, 8, Full Page |
| Self-Refresh | Yes (with PASR) |
| Deep Power-Down | Yes |
| Process Technology | 46 nm CMOS |
| Betriebstemperatur | -40C to +85C (Industrial) |
| Gehäuse | 54-ball VFBGA (8 mm x 9 mm) |
| Ball Pitch | 0.8 mm |
| Montageart | Surface Mount |
| MSL-Level | 3 |
| RoHS-Status | Compliant |
W989D6DBGX6I 54-ball vfbga (8 mm x 9 mm) Pinbelegungsleitfaden
Pinbelegung für W989D6DBGX6I (54-ball vfbga (8 mm x 9 mm)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für W989D6DBGX6I.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
W989D6DBGX6I ist geeignet für 6 Anwendungs: Smartphone Baseband Working Memory, Wearable and Smartwatch Frame Buffer, Portable Media Player RAM, Automotive Infotainment Working Memory, Industrial HMI Panel Memory, IoT Edge Device Working RAM.
Smartphone Baseband Working Memory
The W989D6DBGX6I delivers 32 MB of working RAM for smartphone baseband and application-processor subsystems. Its 1.8 V JEDEC LPSDR interface matches common cellular baseband chipsets that expose a low-power SDRAM controller, and the 166 MHz clock rate supplies up to 266 MB/s bandwidth. The partial-array self-refresh (PASR) and deep power-down modes minimize standby current when the modem is in sleep, extending battery life. The 54-ball VFBGA (8x9) package with 0.8 mm pitch fits under the SoC shield on compact phone PCBs.
Empfohlen
Wearable and Smartwatch Frame Buffer
Wearable designs such as smartwatches and fitness bands benefit from the W989D6DBGX6I's combination of low standby current and small footprint. The 32 MB x16 buffer holds display frame data for AMOLED or LCD panels, and the deep power-down mode draws microamps when the watch face is off. Industrial -40C to +85C operation allows the device to survive skin-contact temperature swings and outdoor cold-start conditions. The 8x9 mm VFBGA outline fits inside watch PCBs that typically measure only 30-40 mm in diameter.
Empfohlen
Portable Media Player RAM
Portable audio and video players use the W989D6DBGX6I as a 32 MB working buffer for codec decompression and playlist metadata. The 166 MHz clock rate sustains real-time MP3, AAC, and H.264 decode without stutter, while the x16 data interface keeps the bus pin count low for compact player boards. Programmable burst lengths of 1, 2, 4, 8, or full-page allow the host MCU to optimize DMA transfers for sequential audio streams versus random metadata reads. The 46 nm CMOS process keeps active current under 50 mA during playback.
Empfohlen
Automotive Infotainment Working Memory
Automotive infotainment head units and cluster displays need industrial-temperature working RAM, and the W989D6DBGX6I's -40C to +85C range covers cabin environments including direct sunlight. The 32 MB capacity holds navigation map tiles, rear-camera frame buffers, and HMI graphics. The JEDEC LPSDR interface is supported by most automotive-grade SoCs from NXP, Renesas, and TI. Designers should pair this Winbond part with AEC-Q100 qualified companion ICs in safety-relevant clusters, but the LPSDR memory itself is widely used in non-safety-critical infotainment subsystems.
Empfohlen
Industrial HMI Panel Memory
Industrial HMI panels with touchscreen interfaces rely on the W989D6DBGX6I for 32 MB of GUI frame-buffer memory. The 166 MHz bandwidth supports smooth 60 fps widget redraws on QVGA/WVGA displays. The wide operating temperature range handles factory-floor conditions, and the VFBGA package resists vibration better than leaded parts when properly underfilled. The 1.8 V single-rail supply simplifies power-tree design in 24V-bus industrial systems where a small buck regulator feeds the memory rail.
Empfohlen
IoT Edge Device Working RAM
IoT edge gateways and battery-powered sensor nodes use the W989D6DBGX6I as compact working RAM for protocol stacks (MQTT, CoAP), TLS handshakes, and local data aggregation before uplink. The partial-array self-refresh register allows the device to refresh only the memory region holding live sensor data, dropping standby current to single-digit microamps during sleep cycles. The 1.8 V single supply and small footprint help designers meet strict coin-cell or solar-harvesting power budgets while retaining 32 MB of buffering capacity.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für W989D6DBGX6I – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | W989D6DBGX6E | W989D6DBGX6I-TR | W986D6DBGX6I | W989D6DBGX6I |
|---|---|---|---|---|---|
| Brand | Winbond | Winbond | Winbond | Winbond | Winbond |
| Package | 54-VFBGA (8x9) | 54-VFBGA (8x9) - same | 54-VFBGA (8x9) - same | 54-VFBGA (8x9) - same | 54-VFBGA (8x9) - same |
| Memory Density | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 256 Mbit (16Mx16) | 512 Mbit (32Mx16) |
| Maximum Clock Frequency | 166 MHz | 166 MHz | 166 MHz | 166 MHz | 166 MHz |
| Supply Voltage | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| Operating Temperature | -40C to +85C (Industrial) | Extended grade | -40C to +85C | -40C to +85C | -40C to +85C |
| Interface Type | JEDEC LPSDR Parallel | JEDEC LPSDR Parallel | JEDEC LPSDR Parallel | JEDEC LPSDR Parallel | JEDEC LPSDR Parallel |
| Self-Refresh (PASR) | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Industrial temperature range in compact VFBGA-54 (vs. W986D6DBGX6I)
- JEDEC LPSDR standard compatibility (vs. Proprietary mobile RAM interfaces)
- Partial-array self-refresh and deep power-down modes (vs. Standard SDRAM without low-power modes)
Designhinweise
Per JEDEC LPSDR PCB layout guidelines, length-match the 16 DQ lines (DQ0-DQ15), CLK, and CKE traces within +/-25 mil, and route the command/address bus with matched impedance to 50 ohms. Place one 0.1 µF X7R decoupling capacitor on each VDD ball within 100 mil, and use a continuous ground plane beneath the BGA to provide a low-impedance return path. For four-layer stack-ups, dedicate layer 2 to ground and layer 3 to VDDQ. The VFBGA-54 escape must use microvias-in-pad or dog-bone fan-outs to escape the 0.8 mm pitch ball grid.
The W989D6DBGX6I requires a single 1.8 V rail for VDD and VDDQ. Estimated: at 166 MHz x16 read cycle the device draws approximately 40-60 mA active, dropping to single-digit milliamps in self-refresh and microamps in deep power-down. Pair the LDO with a bulk 10 µF tantalum and a 0.1 µF ceramic bypass per VDD ball. Configure the partial-array self-refresh (PASR) register during initialization to retain only the memory region holding live data, achieving the lowest possible standby current in battery-powered designs.
Do not confuse the W989D6DBGX6I (32Mx16, 512 Mbit) with the lower-density W986D6DBGX6I (16Mx16, 256 Mbit) - they share the VFBGA-54 footprint but the address/ball map differs. Also avoid substituting the x16 W989D6DBGX6I with the x32 W989D2DBGX6I (16Mx32) - the BGA ball assignments differ even though the package is the same 54-VFBGA. Always re-validate PCB layout and the LPSDR controller's address mapping when migrating between densities or bus widths.
Compliance-Informationen
RoHS-compliant and halogen-free per Winbond product page (green 'G' suffix). Not AEC-Q100 qualified - select an automotive-grade Winbond variant for safety-critical automotive applications.
