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K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
The Samsung K4B4G1646E-BCMA is a 4-gigabit DDR3 SDRAM memory chip organized as 256M x 16, operating from a 1.425V to 1.575V supply at 1066 MHz data rate, housed in a 96-ball FBGA package (7.5 x 13.3 mm). DDR3 SDRAM (Double Data Rate Type Three Synchronous Dynamic Random Access Memory) is a JEDEC-standard memory technology that transfers data on both clock edges, doubling bandwidth relative to its clock frequency. Within the memory hierarchy it sits below DDR4/DDR5 generations but remains widely deployed as chip-down main memory next to SoCs and processors with DDR3 memory controllers in embedded and industrial systems. Key features of the K4B4G1646E-BCMA include an operating temperature range of 0C to +95C, auto precharge function, asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration for output driver accuracy, and a data mask (DM) function for byte-level write masking. The x16 organization simplifies 16-bit and 32-bit bus designs common in cost-sensitive embedded platforms. The E-die silicon uses Samsungs mature DDR3 process with a 1.5V core supply and 8n bank architecture supporting burst lengths of 8 (BL8) and on-the-fly addressing. The 96-ball FBGA (fine-pitch ball grid array) package minimizes parasitic inductance, supporting reliable operation at 1066 Mbps data rates with standard fly-by termination topologies on multi-drop or point-to-point buses. Typical applications include single-board computers, set-top boxes, industrial PCs, networking equipment, smart home gateways, and digital TV platforms, where the 4Gb density and x16 interface match common 16/32-bit embedded memory buses. When designing with this device, follow the datasheet termination and ZQ calibration guidelines; the ZQ ball requires a precision 240-ohm resistor to ground, and on-die termination settings must be tuned to trace impedance for signal integrity at full data rate. This page synthesizes distributor pricing from LCSC and Octopart, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing comparative sourcing and engineering value in one place.
K4B4G1646E-BCNB - 4Gb DDR3L SDRAM 256Mx16 1.35V | Samsung
The Samsung K4B4G1646E-BCNB is a 4Gb (4 gigabit) DDR3L SDRAM memory IC organized as 256M x 16, operating at 1.35V (DDR3L low voltage) with a data rate of up to 1866 Mbps, housed in a 96-ball FBGA surface-mount package. DDR3L SDRAM (Double Data Rate 3 Low Voltage synchronous dynamic random-access memory) is a JEDEC-standard memory category within the broader DRAM hierarchy: DRAM -> synchronous DRAM (SDRAM) -> DDR SDRAM -> DDR3L. It transfers data on both rising and falling clock edges, doubling effective bandwidth relative to SDR memory, while the L suffix denotes operation at 1.35V (backwards compatible with 1.5V DDR3) for reduced dynamic power. Key features of the K4B4G1646E include Samsung E-die technology, a 16-bit data interface for parallel transfer, an auto precharge function, an asynchronous reset function, dynamic on-chip termination (ODT), a ZQ calibration function, and a data mask (DM) function, as listed on LCSC and the Samsung datasheet. The operating temperature range is 0C to +95C, suiting commercial and embedded environments. Architecturally, the device uses an 8-internal-bank DDR3 core with burst lengths of 8 (BL8), on-die termination, and ZQ output calibration to maintain signal integrity at high data rates onFly-by-command-addressed PCB topologies. The E-die process lowers operating and standby current versus earlier 4Gb generations, which matters in battery-powered and thermally constrained enclosures. Typical applications include single-board computers and ARM SoC platforms (the part ships in Samsung Artik-based designs), industrial PLCs, medical data-logging devices, networking equipment, and automotive infotainment - anywhere a compact 4Gb x16 DDR3L with mainstream availability is required. Design consideration: verify that the host memory controller supports DDR3L-1866 timing (CL13 at 1.35V) and that the 96-ball FBGA footprint and fly-by routing with per-byte ZQ resistors match the Samsung datasheet layout guidelines. This page synthesizes verified distributor pricing, drop-in same-package alternatives from Samsung, Winbond, ISSI and Alliance Memory, and practical design notes not found in the manufacturer datasheet alone.
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
The Samsung K4B4G1646E-BYK000 is a 4 Gbit DDR3L SDRAM organized as 256M x 16, operating at DDR3-1600 (800 MHz clock) with a 1.25 ns clock cycle and CL11 latency, housed in a 96-ball FBGA (BYK) surface-mount package. Built on Samsung's E-die process, it supports both 1.35 V (DDR3L) and 1.5 V (DDR3) operation. DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) is the third generation of the JEDEC DDR memory family. A DDR3 SDRAM transfers data on both rising and falling clock edges, doubling effective bandwidth relative to SDR memory at the same clock frequency. Within the memory hierarchy, this device sits as a main-memory / working-memory component below CPU caches and above storage in embedded systems, industrial controllers, set-top boxes, and networking equipment. Key features include the 4 Gbit density in a x16 organization with 8 internal banks, support for DDR3-1600 data rates, and programmable CAS latency per the JEDEC DDR3 specification. The device provides auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination (ODT), and data mask (DM) functions for byte-wise write masking, all listed on the Samsung product family datasheet. Technically, the K4B4G1646E uses Samsung's E-die, which lowered operating voltage to 1.35 V while retaining compatibility with 1.5 V DDR3 systems. This reduces I/O and core power compared with first-generation DDR3, important for thermally constrained and battery-backed designs. The 96-ball FBGA package minimizes parasitic inductance, supporting clean signal integrity at 1600 MT/s. Typical applications include embedded main memory for ARM- or MIPS-based SoCs, industrial human-machine interfaces, network switches and routers buffering packets, set-top box and smart-TV memory, and test instrumentation requiring nonvolatile-free working DRAM. A key design consideration is DDR3 controller training: the memory controller must support write leveling and ZQ calibration, and fly-by address/command routing with on-die termination should be used per JEDEC DDR3 design guidance. Power-distribution design must handle simultaneous switching noise on the data bus. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all pricing data as of 2026-09-01.
K4RAH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
The Samsung Electronics K4RAH086VB-BCQK is a 16 Gb DDR5 SDRAM organized as 2G x 8, operating at a 4800 Mbps data rate from a 1.1 V supply, housed in an FBGA-82 surface-mount package. According to the Samsung DDR5 16Gb (x4/x8) product specification (K4RAH0x6VB series, Rev 1.0), the device implements the JEDEC DDR5 SDRAM architecture with on-die ECC and a power delivery architecture suited to next-generation computing platforms. DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random-access memory, a volatile memory technology at the top of the DRAM hierarchy under the broader memory IC and semiconductor storage taxonomy. Compared to DDR4, DDR5 doubles the bank groups, lowers the per-rail operating voltage to 1.1 V, and moves power management onto the module via an integrated PMIC 5100 controller, improving both bandwidth and power efficiency. Samsung states DDR5 delivers up to 7200 Mbps across the family and roughly 30% greater power efficiency than DDR4. Key features of this device include the 16 Gb density in a 2G x 8 organization, 4800 Mbps pin speed, 1.1 V core supply, on-die ECC for improved data reliability, and the compact FBGA-82 ball-grid-array package used on DIMMs, soldered-down memory subsystems, and embedded computing modules. The BCQK speed-grade suffix denotes the commercial temperature, 4800 Mbps bin within the K4RAH0x6VB B-die family. Technically, the K4RAH086VB-BCQK operates in DLL-enabled mode as described in the Samsung datasheet; command/address (CA) and chip select inputs use a defined compliance mask for voltage and timing and run in single-data-rate mode. Internal bank architecture and refreshed operation follow the DDR5 device operation datasheet, which covers features common across Samsung DDR5 devices. Typical applications include servers, AI acceleration hardware, high-performance computing systems, industrial controllers, computing modules, and consumer electronics requiring efficient reliable memory, as reported by distributor product listings for this part. Design-wise, verify motherboard trace length matching, reference voltages, and the CA bus compliance mask, and confirm PMIC sequencing on your platform, since DDR5 power delivery differs fundamentally from DDR4 designs. This page synthesizes distributor stock and pricing references, drop-in alternatives from the same Samsung DDR5 family plus a SK Hynix equivalent, and practical design notes not found in the manufacturer datasheet.
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
The Samsung Semiconductor K4RAH086VB-BCWM is a 16 Gb DDR5 SDRAM organized as 2G x 8, operating at 5600 Mbps data rate from a 1.1 V supply in an FBGA-82 package. A DDR5 SDRAM is a double-data-rate synchronous dynamic random-access memory belonging to the fifth DDR generation. In the memory hierarchy, it sits as a volatile main-memory DRAM below CPU caches, superseding DDR4 with a higher data rate, an on-die ECC engine, and two independent 32-bit sub-channels per module for improved channel efficiency. Samsung is one of the three leading global DDR5 DRAM suppliers alongside Micron and SK Hynix. Key features of this device include 16 Gb density in a single x8 die, 5600 Mbps/pin bandwidth suitable for JEDEC DDR5-5600 class platforms, and a 1.1 V core voltage that delivers roughly 30% better power efficiency than DDR4. The BCWM speed bin and commercial temperature range target mainstream server, networking, and desktop platforms. On-die ECC (link ECC at the DQ receiver path) improves reliability without the pin cost of bus ECC. Architecturally, DDR5 moves power management on-module via a PMIC and splits each die into independent sub-channels with burst length 32, reducing effective command latency on short transfers. The CA bus runs single-data-rate with a dedicated CA training mode; DLL-enabled operation is assumed for all timing specifications in the Samsung datasheet. Typical applications include cloud and enterprise server DIMMs, high-performance desktop UDIMMs, networking line-card buffers, and advanced embedded compute modules where 5600 Mbps bandwidth and low 1.1 V power are required. A key design consideration is signal integrity: DDR5's 5600 Mbps rate demands careful fly-by trace length matching, on-die termination (ODT) tuning, and reference voltage training in the memory controller. This page synthesizes distributor stock data, drop-in alternatives, and practical DDR5 design notes not found in the manufacturer datasheet.
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
The Samsung Electronics K4RAH086VE-BCWM is a 16Gb (2G x 8) DDR5 SDRAM DRAM chip operating at 5600 Mbps data rate with a 1.1V VDD supply, housed in an 82-ball FBGA package and rated for 0C to +85C commercial operating temperatures. It is currently in mass production. DRAM (Dynamic Random Access Memory) is the primary working memory of modern computing systems; DDR5 SDRAM is the fifth generation of the double-data-rate synchronous DRAM family, succeeding DDR4 in the memory hierarchy of PCs, servers, and gaming platforms. DDR5 doubles bank groups and doubles prefetch (16n vs 8n), integrates an on-die power management IC, and delivers higher effective bandwidth at lower per-bit power than DDR4. Key features of the K4RAH086VE-BCWM include its 16 Gb density per chip in a x8 organization (2G x 8), a 5600 Mbps pin speed supporting DDR5-5600 modules (PC5-44800 class), and the low 1.1V core supply of the JEDEC DDR5 standard that reduces dynamic power versus the 1.2V of DDR4. The device uses Samsung advanced DRAM process technology in an 82-ball fine-pitch ball grid array (FBGA) surface-mount package, the standard footprint for discrete DDR5 components used on UDIMMs, RDIMMs, SODIMMs, and soldered-down memory for embedded and client computing boards. Typical applications include desktop and notebook PC main memory modules, gaming memory, workstations, and computing systems that require high-bandwidth main memory. As a DDR5 component it pairs with DDR5 memory controllers in CPUs and with module-level PMICs and registering clock drivers on RDIMM designs. Design consideration: DDR5 signal integrity at 5600 Mbps demands careful length-matched fly-by routing, on-die termination configuration, and reference voltage (VDDQ) decoupling per JEDEC DDR5 module design guidance. This page synthesizes distributor sourcing data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
The Samsung K4RAH165VB-BCQK is a 16Gb (1G x 16) DDR5 SDRAM DRAM component operating at 1.1V with a data rate of up to 4800 Mbps, housed in a fine-pitch ball grid array (FBGA) package for surface-mount assembly. DDR5 SDRAM is the fifth generation of double data rate synchronous dynamic random-access memory, the dominant category of volatile main-memory ICs in the computing hierarchy. Compared with DDR4, DDR5 doubles the bank count, moves the power management from the module to the device (via PMIC on RDIMMs), lowers the operating voltage from 1.2V to 1.1V, and introduces on-die ECC (ODECC), which improves reliability without bus bandwidth overhead. Key features of the K4RAH165VB-BCQK include auto self-refresh, an asynchronous reset function, on-chip error correction code (ECC), write leveling, CRC-based link error detection, and ZQ calibration for output driver impedance matching. These functions address signal integrity and data reliability at multi-gigabit data rates. Operating temperature is specified from 0C to +85C. The device implements the DDR5 architecture with 16n prefetch, bank groups, and same-bank refresh improvements that raise effective bandwidth versus DDR4 at equivalent core frequencies. The 1.1V supply reduces power consumption by roughly 30% relative to DDR4 at comparable speeds, per Samsung DDR5 family documentation, making the part attractive for power-constrained platforms. Typical applications include PC client DRAM modules (UDIMM/SODIMM), networking and communication equipment, embedded and industrial computing platforms, and notebook/mainboard memory subsystems, where a stable, qualified DDR5 component supply is required. Design considerations: DDR5 signal integrity demands length-matched routing, on-die termination (ODT) programming, and reference voltage training routines implemented by the memory controller; the ZQ calibration pin requires a precision external resistor per the DDR5 datasheet guidelines. This page synthesizes distributor pricing, drop-in same-family alternatives, cross-reference data, and practical design notes not found in the raw Samsung datasheet, giving sourcing and engineering teams a single citable reference.
K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung
The Samsung Semiconductor K4RBH086VB-BCWM is a 16Gb DDR5 SDRAM DRAM component organized as 2G x 8, operating from a 1.1V supply in an 82-ball FBGA (fine-pitch ball grid array) package. It belongs to Samsung's K4RBH DDR5 family, the second-generation DDR5 product line used in servers, networking platforms, and advanced embedded computing systems. A DRAM (Dynamic Random Access Memory) is a volatile semiconductor memory that stores each bit in a separate capacitor within an integrated circuit, requiring periodic refresh to retain data. In the memory hierarchy, DRAM sits between CPU caches (SRAM) and storage (NAND flash), serving as the primary working memory of computing systems. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, doubling the bank groups and burst length of DDR4 while lowering the operating voltage to 1.1V for roughly 30% better power efficiency. Key features of the K4RBH086VB-BCWM include its 16Gb density per die, x8 organization suited to mainstream DIMM and soldered-down designs, and the industrial-standard 82-FBGA surface-mount package used across all DDR5 discrete DRAM vendors, which simplifies second-source qualification. The BCWM speed-grade suffix in the sister K4RAH part denotes 5600 Mbps operation; the exact data rate of the K4RBH grade should be confirmed against the official Samsung datasheet before design-in. Architecturally, the device follows the JEDEC DDR5 specification with an on-die ECC (link ECC), a decision-feedback equalization capable DQ receiver, and a serial presence detect interface managed by the module's PMIC in DIMM applications. Command/address lines operate in single-data-rate mode with compliance masks defined in the Samsung 16Gb B-die specification. Typical applications include DDR5 server RDIMM/LRDIMM modules, networking switch line-card memory, AI accelerator memory buffers, and high-density embedded computing boards. Design consideration: DDR5 routing requires length-matched fly-by command/address topology and on-die termination settings tuned per the Samsung datasheet; do not assume DDR4 layout rules transfer. This page synthesizes distributor inventory data, drop-in same-footprint alternatives, and practical design notes not found in the manufacturer datasheet alone.
K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung
The Samsung Semiconductor K4RCH046VM-2CLP is a 32Gb DDR5 SDRAM component organized as 4G x 4 (x4 configuration), operating at a 6400 Mbps data rate from a 1.1V supply in a 78-ball FBGA surface-mount package, rated for commercial 0C to 85C ambient operation. DDR5 SDRAM (Double Data Rate Type Five synchronous dynamic random-access memory) is the fifth generation of DDR memory, succeeding DDR4 as the dominant DRAM standard for servers, workstations, and premium client PCs. In the system hierarchy, the K4RCH046VM-2CLP sits at the component level: DRAM component -> memory module (DIMM/SODIMM/ RDIMM) -> memory subsystem -> compute platform. Samsung's DDR5 family spans 16Gb to 32Gb densities and data rates up to 7200 Mbps, delivering approximately 30% greater power efficiency than DDR4. Key differentiating features of this part include the doubled bank architecture of DDR5 (32 banks in 8 bank groups versus DDR4's 16 banks), on-die ECC (error correction code) that improves reliability without host overhead, and a decision-feedback equalizer (DFE) on the DRAM side enabling 6400 Mbps signaling integrity. The low 1.1V operating voltage reduces DRAM subsystem power versus DDR4's 1.2V, which is critical for data-center energy budgets. Architecturally, DDR5 moved the power management from the module to a dedicated on-module PMIC (as in RDIMMs), while this bare component integrates multiple independent channels per die with bank-group parallelism to raise effective bandwidth. At 6400 Mbps in a x4 organization, this component provides the raw bandwidth foundation for 512GB-class RDIMMs and memory-intensive accelerators. Typical applications include hyperscale data-center server memory (RDIMM builds), AI/HPC accelerator memory, high-end workstations, and premium PC DIMMs, where per-bit cost, density, and bandwidth dominate selection. A key design consideration: DDR5 component signal integrity demands length-matched routing, ODT (on-die termination) tuning, and reference design adherence to the JEDEC DDR5 specification; verify speed-bin timing with the Samsung DDR5 datasheet for the specific speed grade suffix (here the -2CLP grade at 6400 Mbps). This page synthesizes distributor stock data, verified specification values, same-family alternatives, and practical design notes not found in the manufacturer datasheet alone.
K4RHE086VB-BCWM - DDR5 24Gb 5600Mbps SDRAM | Samsung
The Samsung Semiconductor K4RHE086VB-BCWM is a 24Gb DDR5 SDRAM DRAM device operating at 5600 Mbps data rate from a 1.1V core supply, organized as 2G x 8 in a surface-mount FBGA package. It is one of the highest-density monolithic DDR5 components in Samsung's DDR5 portfolio and is widely deployed in DDR5 memory solutions for data centers and industrial systems where long-term availability is required. DRAM (Dynamic Random Access Memory) is a semiconductor memory that stores each bit in a separate capacitor within an integrated circuit. Within the memory hierarchy, DRAM sits as main system memory between CPU caches and storage. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, successor to DDR4, offering higher densities per die, on-die ECC, and improved power efficiency relative to DDR4. Key features of the K4RHE086VB-BCWM include 24Gb density in a single die, 5600 Mbps/pin data rate, a 1.1V core voltage, and the DDR5 feature set including on-die ECC and improved bank architecture for higher effective bandwidth. The x8 organization suits ECC-protected server channels where 72-bit buses are built from 9 x8 components. The device implements the DDR5 architecture with bank group parallelism and burst length 16, delivering high sustained bandwidth at moderate frequencies. DLL-enabled mode operation governs timing specifications per Samsung's DDR5 specification documents; timing parameters for this speed grade follow Samsung's DDR5 device specification family for 5600 Mbps operation. Typical applications include data center server RDIMM and module assemblies, high-performance workstation memory, premium PC DIMMs, and industrial systems requiring long-term DDR5 supply continuity. The x8 organization is particularly suited to ECC server implementations. When designing in this device, verify controller compatibility with 24Gb address mapping, since 24Gb DDR5 requires specific row/column addressing support; not all memory controllers accept non-power-of-two densities. This page synthesizes distributor inventory data, drop-in alternatives within the Samsung DDR5 family, and practical design notes not found in the manufacturer datasheet. Pricing is quotation-based as of 2026-09-04.
K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics
The Samsung Electronics K4RHE086VP is a 24-gigabit DDR5 SDRAM component organized as x8, fabricated on Samsung's 1a-class (D1a) DRAM process node and packaged in a standard FBGA surface-mount package for server, client, and mobile memory subsystems. DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing hierarchies. It sits within the DRAM family alongside DDR4, DDR3, LPDDR4/5, and HBM, and functions as the primary working memory between the CPU and storage. DDR5 doubles the bank count per bank group versus DDR4, moves power management onto the module via a PMIC, and introduces on-die ECC to improve reliability at higher densities. Key features of the K4RHE086VP include its 24 Gb density, which enables higher memory capacity per chip and reduces component count on high-capacity DIMMs; the x8 organization, which suits server RDIMMs and embedded memory arrays; and Samsung's D1a process, which improves bit density and power efficiency versus earlier nodes. Samsung's DDR5 family supports the DDR5 interface standard with its associated speed bins for data rates in the multi-gigabit-per-second class (speed grade code [DATA_NEEDED: maximum data rate for this speed bin]). Architecturally, the device uses DDR5 core innovations including a 16n prefetch, dual 32-bit subchannel-capable DIMM topologies, on-die ECC (ODDE), and decision-feedback equalization (DFE) on the data path to sustain signal integrity at high data rates. Bank-group architecture shortens effective access latency and raises sustainable bandwidth for multi-core server workloads. Typical applications include data-center RDIMM and LRDIMM modules for cloud servers, high-performance client and workstation DIMMs, AI/ML training and inference memory pools, and networking equipment requiring high bandwidth per watt. The 24 Gb density is particularly valuable in 64 GB+ module builds where minimizing IC count improves power and reliability. Design consideration: DDR5 termination and routing demand tighter impedance control than DDR4; follow the Samsung DDR5 design guide for fly-by command/address routing and reference-voltage planning, and always confirm the exact speed bin and operating temperature range on the official datasheet before finalizing a BOM. This page consolidates verified distributor listings, same-brand drop-in alternatives from the Samsung DDR5 portfolio, and practical sourcing guidance not found in the manufacturer datasheet.
K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung
The Samsung K4RHE165VB-BCWM is a 24Gb DDR5 SDRAM memory chip organized as 1G x 16, operating at 5600 Mbps data rate from a 1.1V supply, packaged in a 106-ball FBGA. It is a next-generation DRAM component engineered for high-bandwidth, power-efficient memory subsystems in mass production status. DDR5 SDRAM is the fifth generation of double data rate synchronous dynamic random-access memory, a class of volatile semiconductor memory that stores data in capacitor-based cells refreshed at regular intervals. Within the memory hierarchy, DDR5 SDRAM sits as the main-system-memory technology, succeeding DDR4 and delivering higher densities, higher data rates, and improved power efficiency through a lower 1.1V operating voltage and on-die power management. Key features of the K4RHE165VB-BCWM include 24 Gb (3 GB) density in a x16 organization, a 5600 Mbps/pin data rate, and a 1.1V core supply that reduces dynamic power versus DDR4. The 106-ball Fine-Pitch Ball Grid Array (FBGA) package provides a compact footprint for dense memory module and embedded designs. The device is specified for commercial operating temperatures of 0 to 85 degrees C and is in mass production, per Elite Memory Solutions and Samsung product listings. Architecturally, this DDR5 generation doubles the bank groups and burst length compared with DDR4, improving effective bandwidth and enabling the channel architecture used in modern memory modules. The x16 organization suits designs that populate narrower memory channels or require high capacity per component. Typical applications include next-generation DDR5 memory modules (RDIMM, UDIMM, SODIMM), high-performance computing systems, servers and workstations, and AI/ML accelerator memory where bandwidth and energy efficiency are critical. Design consideration: verify controller training margins at 5600 Mbps and follow the DDR5 fly-by routing and on-die termination guidance in the Samsung datasheet to maintain signal integrity. This page synthesizes distributor stock data, drop-in alternative analysis, and application guidance not found in the manufacturer datasheet alone.
K4S510432D-UC75 - 512Mb SDRAM 133MHz 54-TSOP II | Samsung
The Samsung K4S510432D-UC75 is a 512Mbit synchronous DRAM (SDRAM) memory IC organized as 128M x 4, operating at up to 133 MHz with a 65 ns access time, supplied in a 54-pin TSOP II package. It uses a 3.3V LVTTL interface with an operating supply range of 3.0V to 3.6V. Synchronous DRAM is a class of DRAM that interfaces with a system clock, allowing burst-mode data transfer synchronized to the memory controller rather than asynchronous row/column strobing. Within the memory hierarchy, SDRAM sits between legacy asynchronous DRAM and modern DDR generations, and remains the standard main-memory technology for legacy embedded systems, industrial controllers, and older PC platforms (PC133 era). Key features of the K4S510432D include the D-die process node, fully synchronous operation to the positive clock edge, and a burst length of 1, 2, 4, 8, or full-page with sequential and interleave burst modes. CAS latency options of 2 or 3 allow the memory controller to trade access latency against clock speed. Auto-refresh and self-refresh modes are supported, along with power-down mode for reduced standby consumption. Technically, the device uses CMOS circuitry with a four-bank architecture addressed via two bank-select pins, providing high effective bandwidth at 133 MHz. The LVTTL input/output structure simplifies interfacing with 3.3V memory controllers, FPGAs, and ASICs. The UC75 speed grade guarantees 133 MHz operation at CL3 and 100 MHz at CL2 across the commercial temperature range. Typical applications include legacy industrial main memory, telecom line cards, set-top boxes, test and measurement instrumentation, and FPGA-based designs requiring 3.3V synchronous memory such as systems built around Lattice and Microsemi (now Microchip) FPGA families. When designing with this SDRAM, ensure proper termination on the high-speed address/control bus and strictly observe refresh intervals (64 ms per 4096 rows typical for the class); omitting the mode-register-set sequence after power-up is the most common bring-up failure. This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes not consolidated in the manufacturer datasheet.
K4S510432D-UC75T00 - 512Mb SDRAM 133MHz TSOP II | Samsung
The Samsung Semiconductor K4S510432D-UC75T00 is a 512Mbit (128M x 4) synchronous DRAM (SDRAM) memory IC operating at 133 MHz (CL3) with a 65 ns access time, LVTTL I/O, and a 3.0V to 3.6V power supply, housed in a 54-pin TSOP II package. SDRAM is a type of DRAM that synchronizes its interface with the system clock bus, allowing burst-mode transfers at the full clock rate rather than asynchronous access delays. Within the memory hierarchy, SDRAM sits above asynchronous fast-page-mode and EDO DRAM and below DDR generations, making it the cornerstone memory technology for embedded systems of the late 1990s through 2000s. The x4 organization of this device makes it suitable for wide memory word construction via byte/wide chip interleaving. Key features include a 133 MHz clock rate at CAS Latency 3, LVTTL-compatible inputs and outputs, fully synchronous operation to the positive clock edge, internal four-bank architecture enabling interleaved accesses, and burst lengths of 1, 2, 4, 8, or full page with sequential or interleave burst type. Programmable CAS latency and mode register configuration give designers flexibility in bus timing. The D-die generation uses a CMOS process with JEDEC-standard 54-pin TSOP II footprint and 0.8 mm pin pitch. Auto-refresh and self-refresh modes, with 4096 refresh cycles per 64 ms interval, preserve data integrity in both powered operation and low-power suspend states. Typical applications include industrial control systems, networking and telecom equipment, test instruments, legacy embedded designs, and replacement repair of 133 MHz SDRAM bus designs where DDR memory is not pin-compatible. Design consideration: ensure the printed circuit board follows the manufacturer's datasheet guidance for clock routing and decoupling - SDRAM is sensitive to clock skew and VDDQ noise at 133 MHz operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
K4VCF325ZC-SC28 - 24Gb GDDR7 28Gbps DRAM | Samsung
The Samsung K4VCF325ZC-SC28 is a 24 Gbit (3 GB) GDDR7 SGRAM graphics memory chip rated at 28.0 Gbps per pin, housed in a 266-ball FBGA package. Organized as 512M x 32, it is the first high-volume 3GB-density GDDR7 module generation, enabling non-power-of-two VRAM configurations such as 12 GB and 24 GB graphics cards. GDDR7 (Graphics Double Data Rate 7) is the seventh generation of Samsung's GDDR DRAM family, a high-bandwidth memory class optimized for GPU frame buffers, AI accelerators, and high-performance computing. Within the memory hierarchy, GDDR7 sits alongside HBM as a graphics-oriented DRAM, prioritizing per-pin data rate and cost efficiency over the ultra-wide bus of HBM stacks. Key features of the K4VCF325ZC-SC28 include its 28 Gbps per-pin data rate (3500 MHz nominal clock with PAM3 signaling, per Samsung's GDDR7 architecture), 24 Gbit density in a single die-class package, and the standard 266-ball FBGA footprint shared with Samsung's 16 Gbit K4VAF325ZC GDDR7 family. This footprint compatibility simplifies migration between 2 GB and 3 GB chips on GPU boards designed for the SC28 speed grade. Technically, GDDR7 moves from NRZ/PAM4-era signaling to PAM3 encoding, transmitting 1.5 bits per cycle to reach 28 Gbps-class effective rates while improving power efficiency per transferred bit compared with GDDR6 at equivalent bandwidth. The -SC28 speed suffix denotes the 28 Gbps bin; Samsung also ships SC32 and SC36 bins in the same family for higher-bandwidth GPU designs. Typical applications include gaming and professional GPU VRAM, AI inference accelerator frame buffers, workstation graphics, and high-bandwidth memory subsystems where 3 GB per chip enables denser VRAM arrays without increasing package count. Design consideration: the -SC28 speed grade is the slowest bin in the K4VCF325ZC family; designs targeting 32 Gbps or 36 Gbps must specify SC32 or SC36 SKUs, and PCB signal-integrity margins must be validated for the PAM3 eye at the intended data rate. This page synthesizes distributor pricing, drop-in family alternatives, and practical design guidance not consolidated in Samsung's official product pages.
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
The Samsung Semiconductor K6F2016U4E-EF70T is a 2Mbit asynchronous static RAM (SRAM) organized as 128K x 16 bits, operating from a 2.7V to 3.3V supply with a 70 ns address access time, housed in a 48-ball fine-pitch ball grid array (TFBGA, 6 x 7 mm footprint). An asynchronous SRAM is a type of static random-access memory that does not require a clock or refresh cycles: data is accessed whenever address and control signals (CE, OE, WE) are applied, and data is retained as long as power is present. Within the memory-IC hierarchy, it sits under solid-state memory -> RAM -> static RAM -> asynchronous parallel SRAM, complementing DRAM (which needs refresh) and synchronous SRAM (which is clocked). Full-CMOS fabrication gives it very low standby current, making it a natural fit for battery-backed and low-power designs. Key features of the K6F2016U4E family include the super-low-power full-CMOS process, a wide 2.7V to 3.3V operating supply, industrial operating temperature range support, and a compact 48-ball chip-scale-style package that gives designers board-space flexibility. The 16-bit data bus simplifies interfacing to 16-bit and 32-bit processors without external bus transceivers. Technically, the device is a parallel asynchronous SRAM: the 70 ns speed grade (tAA) suits mid-speed embedded controllers, and the three control lines (chip enable, output enable, write enable) allow straightforward glueless connection to most microcontrollers and FPGAs. Deep power-down via chip enable keeps standby consumption minimal in portable and battery-backed applications. Typical applications include battery-powered data acquisition, industrial automation controllers, networking line cards, computer peripherals, and code/data buffering alongside MCUs, FPGAs, and DSPs. Design consideration: as with all asynchronous SRAMs, respect the address setup, CE pulse width, and data hold timings from the manufacturer datasheet, and use controlled series termination on high-speed address lines to limit ringing. This page synthesizes distributor availability, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet alone. Pricing shown is request-quote based as of 2026-09-01.
K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung
The Samsung Semiconductor K6F3216U6M-EF70T is a 32Mbit asynchronous SRAM memory IC organized as 2M x16 bits, operating from a low 3V supply with a 55 ns access speed, housed in a 55-TFBGA package measuring 7.5 x 12 mm. An asynchronous SRAM (Static Random Access Memory) is a type of volatile memory that stores data in bistable latching flip-flops and does not require a clock signal or periodic refresh to retain contents, unlike DRAM. Within the memory hierarchy, it sits under RAM -> semiconductor memory -> memory ICs, and its clockless interface makes it simple to integrate with microcontrollers, FPGAs, and legacy bus-based systems where deterministic access timing matters more than raw density. Key features of the K6F3216U6M family include super-low power consumption typical of Samsung's full CMOS static RAM process, a low-voltage 3V supply rail that reduces overall system power budgets, a wide 2M x16 organization that suits 16-bit and 32-bit data buses, and a compact fine-pitch ball grid array (FBGA) footprint that saves board space in dense assemblies. The device is fabricated using Samsung's advanced full CMOS process technology, which minimizes static current draw and supports battery-backed and portable applications. The -EF70 speed grade guarantees a 55 ns address access time, adequate for embedded controllers, logging buffers, and data storage modules that do not require high-performance zero-wait-state memories. The TFBGA (Thin Fine-Pitch BGA) package provides low profile and reliable surface-mount assembly. Typical applications include data storage and firmware boot buffers in embedded systems, industrial controllers requiring non-clock-dependent scratch memory, computing modules, embedded logging systems, and replacement sourcing for legacy designs that specified Samsung low-power SRAM. When designing with this part, verify that your bus timing supports the 55 ns access time and confirm power-rail sequencing recommendations from the manufacturer datasheet; because this is a mature, slow-speed SRAM, plan second-source strategies early. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single procurement and design reference for the K6F3216U6M-EF70T.
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
The Samsung K6X0808C1D-BF55 is a 32K x 8 bit low-power asynchronous CMOS Static RAM (SRAM) organized as 256Kbit of parallel memory with a 55 ns access time, housed in a 28-pin SOP (Small Outline Package) surface-mount package. An asynchronous SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit made of transistors, and unlike DRAM it never requires refresh cycles. Because access is asynchronous - controlled directly by address and chip-enable timing rather than a clock - it provides deterministic, simple read and write operations. Within the memory hierarchy, SRAM sits above DRAM in speed and cost, and this parallel SRAM family occupies the classic embedded-memory slot historically used for buffering, scratchpad, and code/data storage in microprocessor-based systems. Key features include a 5 V single supply operation, a fast 55 ns address access time, and the low stand-by and operating power typical of Samsung's advanced CMOS process technology. The K6X0808C1D family supports various operating temperature ranges and multiple package options, giving designers system-level flexibility. The three control pins (CE, OE, WE) provide standard parallel-SRAM bus interfacing with glueless connection to most 8-bit and 16-bit microcontrollers and CPUs. Technically, the device uses Samsung CMOS SRAM process technology with a standard asynchronous timing architecture: address setup, chip-enable access, output-enable access, and write-cycle timings are all specified in the manufacturer datasheet. Data retention in stand-by is achieved with CE deselected, which keeps power consumption minimal in battery-backed or intermittently powered designs. Typical applications include industrial control systems, networking and telecom line-card buffers, test and measurement instrumentation, legacy embedded designs requiring second-sourceable 32K x 8 memory, and battery-backed data logging where deterministic asynchronous access is preferred over clocked memory. When designing with this device, ensure address and control setup/hold times meet the 55 ns grade datasheet limits, and tie unused address or control lines appropriately to avoid floating inputs that increase stand-by current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
K6X0808C1D-BF70 - 32Kx8 70ns Async SRAM | Samsung
The Samsung K6X0808C1D-BF70 is a 256Kbit asynchronous static RAM (SRAM) organized as 32K x 8 bits, with a fast 70 ns access time, fabricated in Samsung's advanced low-power CMOS process and housed in a 28-pin SOP (PDSO28) surface-mount package. An asynchronous SRAM is a type of volatile solid-state memory that stores each bit using a bistable latch (typically six transistors per cell) and does not require a clock or refresh cycles, unlike DRAM. In the memory hierarchy, SRAM sits above DRAM as the fastest category of external random-access memory, and the asynchronous subcategory communicates address, data, and control signals in pure combinational fashion - the access time (here 70 ns from address valid to data valid) is the only timing constraint, making these devices extremely simple to interface with 8-bit microcontrollers, 8051-family MCUs, and legacy bus designs. Key features of the K6X0808C1D-BF70 include its 32K x 8 organization suited to byte-wide data buses, the 70 ns commercial access-time grade, CMOS technology delivering low standby power, and a JEDEC-standard control set of chip enable (CE), output enable (OE), and write enable (WE) pins for direct bus connection without glue logic in most designs. Technically, the device uses a fully static CMOS cell array with row/column decoders and tri-state I/O buffers. Data retention is maintained by the CE control: deselecting the chip drives I/O pins to high impedance and drops the array into a low-current standby state, an advantage for battery-backed memory applications. Because there are no refresh requirements, software and hardware overhead are zero compared with pseudo-static or dynamic alternatives. Typical applications include embedded control boards requiring non-cache scratchpad RAM, industrial instruments, telecom line cards, test equipment buffers, and battery-backed data logging where a small, reliable, low-power memory pool is needed. Design-wise, ensure address setup and CE/OE pulse widths meet the 70 ns timing budget at your system clock rate, and decouple VCC with 0.1 uF ceramics close to the package. This page synthesizes distributor availability, drop-in same-family alternatives, and practical design notes not consolidated in the manufacturer datasheet.
K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung
The Samsung Semiconductor K6X0808C1D-BF70T is a 256Kbit asynchronous low-power CMOS static RAM organized as 32K x 8 bits, with a 70 ns access time, 4.5V to 5.5V supply range, and a 28-pin SOP surface-mount package. It is fabricated on Samsung's advanced CMOS process for low power dissipation and TTL-compatible I/O. An asynchronous SRAM (static random-access memory) is a volatile memory IC that retains data as long as power is applied, without requiring refresh clocks or refresh cycles. In the memory hierarchy it sits below fast cache SRAM but above DRAM in interface simplicity: a parallel SRAM needs only address inputs, chip enable, output enable, write enable, and bidirectional data I/O, making it a power-management-friendly choice for embedded systems with 5V microprocessor buses. Key features of the K6X0808C1D-BF70T include a 70 ns write cycle time (word and page), a wide 4.5V-5.5V operating supply, an industrial temperature range of -40C to +85C, and fully static operation requiring no clock or refresh. Data retention at low VCC supports battery-backup designs, and the CMOS process delivers low standby current compared with bipolar SRAM. Architecturally, the device uses 15 address lines (A0-A14) to select one of 32,768 byte-wide locations. Access is controlled asynchronously by the CE, OE, and WE pins, giving glueless interfacing to classic 8-bit buses such as 8051 derivatives, 68HC11, and H8 MCUs, as well as FPGA emulated buses in modern retargeted designs. Typical applications include industrial control systems, telecom line cards, legacy embedded controller memory expansion, test equipment scratchpad memory, and battery-backed data logging where 256Kbit of reliable parallel SRAM is required. When designing, budget the 70 ns access time plus MCU bus turnaround for the full read cycle, and keep CE low time minimized to reduce standby power. Decouple VCC with a 0.1uF ceramic capacitor close to the package. This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes not found in the manufacturer datasheet.
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
The Samsung Semiconductor K6X0808C1D-GF55000 is a 256Kbit asynchronous static RAM (SRAM) memory IC organized as 32K x 8 bits in a 28-pin SOP (small outline package) surface-mount package. It delivers a fast 55 ns access time from a single 5V supply with fully static operation requiring no clock or refresh. An asynchronous SRAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit built from cross-coupled inverters. Unlike DRAM, SRAM retains data without refresh as long as power is applied, and unlike synchronous SRAM it does not require a clock signal - address, chip-enable, and write-enable signals directly control read and write cycles. Within the memory hierarchy, SRAM sits at the fast end, and the K6X0808 family serves industrial and embedded designs that need simple, glueless parallel memory expansion. Key features of the K6X0808C1D-GF55000 include its 32K x 8 organization with a common data I/O bus, three-state outputs for bus sharing, low-power CMOS fabrication, and dedicated active-low chip enable (CE), output enable (OE), and write enable (WE) control pins for straightforward microprocessor interfacing. The 55 ns access time supports a wide range of 5V embedded controllers without wait states. Technically, the device uses a low-power CMOS cell array with address decoders, sense amplifiers, and write control logic on a single die. Standby power is minimized when CE is deasserted, making the part suitable for battery-backed applications. The GF55000 suffix denotes the 55 ns speed grade and packaging code. Typical applications include embedded controller code and data buffering, industrial control equipment, test instrumentation, telecom line cards, and legacy 5V system memory upgrades where an asynchronous parallel SRAM footprint must be preserved. Design consideration: use a single 0.1 uF ceramic decoupling capacitor close to the VCC pin and ensure the 55 ns access time is respected in address-to-data timing analysis at temperature extremes. This page synthesizes distributor pricing, same-family drop-in speed-grade alternatives, pinout guidance, and practical design notes not consolidated in the manufacturer datasheet.
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
The Samsung Semiconductor K6X0808C1D-GF55T is a 256Kbit asynchronous static RAM (SRAM) organized as 32K x 8 bits, fabricated in Samsung's advanced full-CMOS process, with a 55 ns access time and 5.0 V operation in a 28-pin SOP (450 mil) surface-mount package. An asynchronous SRAM is a type of volatile static memory that stores one bit per flip-flop cell and does not require a clock or refresh cycle, unlike DRAM. In the memory hierarchy, SRAM sits above DRAM in speed and is used wherever fast, deterministic read and write access is needed - cache memories, buffers, and embedded CPU scratchpads. Because static cells retain data while powered, asynchronous SRAMs such as this family remain popular in legacy industrial and telecom designs that need simple parallel memory interfaces. Key features of the K6X0808C1D-GF55 include a 55 ns address access time, a single 5.0 V power supply, full-CMOS technology for low standby power, and a standard asynchronous parallel interface with dedicated chip enable (CE), output enable (OE) and write enable (WE) controls. The family supports various operating temperature ranges and multiple package types for system design flexibility, and it supports low data retention voltage for battery-backed applications. Technically, the CMOS process yields very low power dissipation: active current is drawn only during access, and standby current drops to microamp levels in static operation. The three-wire control interface (CE, OE, WE) allows direct connection to microcontrollers, 8051-class CPUs and FPGA parallel bus logic without glue circuitry. The 32K x 8 organization maps cleanly onto a 15-bit address bus with an 8-bit data bus. Typical applications include legacy industrial controllers, telecom line cards, network equipment buffers, test instrumentation, and battery-backed data logging in embedded systems where a simple 5 V parallel SRAM is required. When designing with this device, ensure address setup and CE/OE timing margins meet the 55 ns access window, and add 0.1 uF decoupling near the VCC pins. Verify that the SOP-28 (450 mil) footprint is used, as the family is also offered in 28-DIP-600mil - these footprints are not interchangeable. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung
The Samsung Semiconductor K6X0808C1D-GF55T00 is a 256Kbit asynchronous static RAM (SRAM) memory IC organized as 32K x 8 bits, with a 55ns access time, fabricated in Samsung's low-power CMOS process and housed in a 28-pin SOP (450 mil) surface-mount package. The T00 suffix denotes the tape-and-reel packaging variant for automated assembly. Asynchronous SRAM is a class of random-access memory that retains data as long as power is applied, without requiring refresh clocks or address strobes. Unlike DRAM, SRAM cells are built from CMOS latches, giving the K6X0808C1D family fast, deterministic access times and a simple parallel interface of address inputs (A0-A14), eight bidirectional data lines (I/O0-I/O7), and three control pins: chip enable (CE), output enable (OE), and write enable (WE). Within the memory hierarchy it sits between register files and dense DRAM, and within power management considerations it belongs to the low-power standby class of memories. Key features include the 55ns address access time (the GF speed grade), a wide operating voltage class supporting low data retention voltage for battery-backed applications, and CMOS technology delivering very low standby power. The device supports various operating temperature ranges and package options across the family, giving designers flexibility in industrial and consumer system design, according to the Samsung K6X0808C1D-GF55 datasheet. Architecturally, the device decodes 15 address lines into a 32768-word memory array of 8-bit wide CMOS cells. Fully static operation means no clock, no refresh, and no timing chains, which simplifies glueless interfacing to 8-bit microcontrollers, MCUs with external memory buses, and FPGA emulated buses. Three-state outputs with OE control allow direct bus connection with other memories or peripherals. Typical applications include battery-backed data storage in industrial control systems, code and data expansion for embedded 8/16-bit MCUs, set-top box and consumer electronics buffers, telecom line cards, and automotive electronics modules requiring non-volatile-like retention with a small backup cell. Design consideration: for battery backup designs, drive CE high in standby to enter data retention mode; verify the retention voltage and standby current from the manufacturer datasheet for your exact temperature range. This page synthesizes distributor availability data, same-family drop-in speed and temperature-grade alternatives, and practical design notes not found in the manufacturer datasheet.
K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
The Samsung Semiconductor K6X0808C1D-GF70000 is a 256Kbit low-power asynchronous static RAM (SRAM) organized as 32K x 8 bits, operating from a single 5V (4.5V to 5.5V) supply with a 70ns access time in a 28-pin SOP (small outline package) for surface-mount assembly. A static RAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit, retaining data as long as power is applied without any refresh cycle requirement. Within the memory IC hierarchy, SRAM sits alongside DRAM and nonvolatile memory (EEPROM, Flash), and is prized for its simple parallel interface, deterministic fast access times, and zero refresh overhead, making it a classic choice for embedded CPU buffers, caches, and scratchpad memory. Key features of the K6X0808C1D family include low-power advanced CMOS process technology, TTL-compatible input and output levels, a fully asynchronous parallel address/data interface (no clock required), and the 70ns speed grade indicated by the -GF70 speed code. The family is offered in multiple operating temperature ranges and package options per Samsung's datasheet, giving designers layout flexibility. Technically, the device uses a 15-bit address bus (A0-A14) to select one of 32,768 byte locations, with chip enable (CE), output enable (OE), and write enable (WE) control lines implementing standard asynchronous SRAM timing. The tri-state 8-bit I/O bus connects directly to microprocessor data buses. Typical applications include industrial control systems, automotive electronics, legacy communication equipment, and test instruments that require byte-wide scratchpad RAM with simple 5V logic interfacing. Design consideration: because this is a 5V part, level shifting is required when interfacing with 3.3V microcontrollers; also verify the 28-SOP footprint matches wide-body SOIC-28 land patterns. This page synthesizes distributor availability data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.