1ED3142MC12HXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED3142MC12HXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | Magnetic coupling (coreless transformer) |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Número de salidas | 2 (separate source/sink) | 1 |
| Configuration | Inverting, Non-Inverting | High-side / Low-side (non-inverting) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Encapsulado | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-8 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Estado RoHS | — | Compliant |