1ED3142MC12HXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3142MC12HXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Part Number | 1ED3142MC12HXUMA1 | β |
| Product Family | EiceDRIVER X3 Compact | β |
| Driver Type | Isolated single-channel gate driver | β |
| Isolation Technology | Coreless transformer (galvanic) | Magnetic coupling (coreless transformer) |
| Isolation Voltage | 3000 Vrms | β |
| Number of Channels | 1 | β |
| Number of Outputs | 2 (separate source/sink) | 1 |
| Configuration | Inverting, Non-Inverting | High-side / Low-side (non-inverting) |
| Source Drive Current | 6 A | β |
| Sink Drive Current | 6.5 A | β |
| Maximum Rise Time | 20 ns | β |
| Maximum Fall Time | 20 ns | β |
| Propagation Delay (typ.) | 40 ns | β |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | β |
| Package | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| EU RoHS | Compliant | β |
| Part Status | Active | β |
| ECCN | EAR99 | β |
| Channel Type | β | Single-channel |
| Number of Drivers | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |
| RoHS Status | β | Compliant |