1ED3142MC12HXUMA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 1ED3142MC12HXUMA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 1ED3142MC12HXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.32 $1.45
Manufacturer Infineon Technologies —
Part Number 1ED3142MC12HXUMA1 —
Product Family EiceDRIVER X3 Compact —
Driver Type Isolated single-channel gate driver —
Isolation Technology Coreless transformer (galvanic) Magnetic coupling (coreless transformer)
Isolation Voltage 3000 Vrms —
Number of Channels 1 —
输出数量 2 (separate source/sink) 1
Configuration Inverting, Non-Inverting High-side / Low-side (non-inverting)
Source Drive Current 6 A —
Sink Drive Current 6.5 A —
Maximum Rise Time 20 ns —
Maximum Fall Time 20 ns —
Propagation Delay (typ.) 40 ns —
Supported Switches IGBT, MOSFET, SiC MOSFET —
封装 PG-DSO-8 (PG-LDSO-8-1) PG-DSO-8 (DSO-8)
安装类型 Surface Mount Surface Mount
EU RoHS Compliant —
Part Status Active —
ECCN EAR99 —
Channel Type — Single-channel
Number of Drivers — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
工作温度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
RoHS 状态 — Compliant

数据手册与资源

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