6EDL04N02PRXUMA1 vs 6EDL04N03PRXUMA1 Comparación

Comparación detallada lado a lado de 6EDL04N02PRXUMA1 por Infineon y 6EDL04N03PRXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Activo

Comparación de especificaciones

Parámetro 6EDL04N02PRXUMA1 6EDL04N03PRXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $2,32 $1,85
Product Type 3-Phase Gate Driver IC —
Driver Configuration Half-bridge (3 high-side + 3 low-side) —
Maximum Blocking Voltage +180 V (VS referenced to GND for high side) —
Rated Supply Voltage (VCC) 200 V class (operating range 10 V to 20 V on VCC) —
Source Current (typ.) 0.375 A —
Sink Current (typ.) 0.75 A —
Bootstrap Diode Integrated (BSD) on all 3 high-side drivers Integrated (3 channels)
Over-Current Protection Yes (single-shunt, ITRIP/CIN pin) Yes (adjustable threshold via ITRIP)
Enable Pin (EN) Yes (active-high) —
Fault Output (nFAULT) Yes (active-low, open-drain) —
Input Logic Compatibility CMOS / LSTTL, 3.3 V and 5 V —
Interlocking / Anti-shoot-through Yes (built-in per phase pair) —
Process Technology Thin-film SOI (Silicon-On-Insulator) —
Rango de temperatura de funcionamiento -40 °C to +125 °C —
Maximum Junction Temperature +150 °C —
Encapsulado PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) PG-TSSOP-25
Tipo de montaje Surface Mount Surface Mount
Target Switches MOSFETs up to 180 V, IGBTs up to 180 V —
Nivel MSL MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) 3
Estado RoHS Compliant Compliant
Driver Type — Three-phase gate driver (6-channel half-bridge)
Number of Drivers — 6
Configuración de salida — Non-inverting half-bridge
Supply Voltage (VDD) — 10 V to 25 V
Logic Supply Voltage (VSS) — 3.3 V / 5 V
Output Current (Source) — 0.24 A
Output Current (Sink) — 0.375 A
Tiempo de subida — 60 ns (typical at 1 nF load)
Tiempo de bajada — 26 ns (typical at 1 nF load)
Fault Output — Yes (open-drain)
Patilla de habilitación — Yes (EN, active-high)
Propagation Delay — [DATA_NEEDED: propagation delay]
Temperatura de funcionamiento — -40 C to +125 C
Blocking Voltage — 200 V / 600 V family

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