BSC077N12NS3GATMA1 vs IPD30N10S3L34ATMA1 Comparación
Comparación detallada lado a lado de BSC077N12NS3GATMA1 por Infineon y IPD30N10S3L34ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ ActivoInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC077N12NS3GATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,71 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Tipo de transistor | N-Channel MOSFET (enhancement-mode trench) | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | -55°C to +175°C |
| Encapsulado | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Nivel MSL | 1 | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| Estado RoHS | Compliant | — |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Product Family | — | OptiMOS-T2 |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |