BSC077N12NS3GATMA1 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | β |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| RoHS Status | Compliant | β |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| Product Family | β | OptiMOS-T2 |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |