BSC077N12NS3GATMA1 vs IPD30N10S3L34ATMA1 Comparison

Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC077N12NS3GATMA1 IPD30N10S3L34ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) —
Transistor Type N-Channel MOSFET (enhancement-mode trench) N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 120 V 100 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 180 A
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Operating Junction Temperature -55C to +150C -55°C to +175°C
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TO252-3-11 (DPAK-2 / SC-63)
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
MSL Level 1 1 (JEDEC J-STD-020, 260°C peak reflow)
RoHS Status Compliant —
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Product Family — OptiMOS-T2
Continuous Drain Current (ID, Tc=25°C) — 30 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Datasheets & Resources

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