BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 Comparación
Comparación detallada lado a lado de BSC118N10NSGATMA1 por Infineon y BSC265N10LSFGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 ✓ ActivoInfineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC118N10NSGATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| Encapsulado | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 2 (TrenchFET) |
| Lead Plating | Pb-free | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (junction) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| Series | — | OptiMOS 2 |