BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 对比
详细并排对比 BSC118N10NSGATMA1 出自 Infineon 和 BSC265N10LSFGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 量产中规格对比
| 参数 | BSC118N10NSGATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.72 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| 封装 | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (TDSON-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 2 (TrenchFET) |
| Lead Plating | Pb-free | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| 工作温度范围 | — | -55 C to +150 C (junction) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| Series | — | OptiMOS 2 |