BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 比較
詳細な並列比較: BSC118N10NSGATMA1 メーカー: Infineon および BSC265N10LSFGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 生産中仕様比較
| パラメータ | BSC118N10NSGATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.72 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| パッケージ | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (TDSON-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 2 (TrenchFET) |
| Lead Plating | Pb-free | — |
| RoHS ステータス | Compliant | Compliant |
| ハロゲンフリー | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| 動作温度範囲 | — | -55 C to +150 C (junction) |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| Series | — | OptiMOS 2 |