BSC12DN20NS3GATMA1 vs BSC340N08NS3GATMA1 Comparación
Comparación detallada lado a lado de BSC12DN20NS3GATMA1 por Infineon y BSC340N08NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC12DN20NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 23 A |
| Power Dissipation (PD, Tc) | 50 W | — |
| Encapsulado | PG-TDSON-8-5 | PG-TDSON-8-5 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 3 (N-Channel Trench) |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single N-channel | — |
| Recuento de pines | 8 | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |