BSC12DN20NS3GATMA1 vs BSC340N08NS3GATMA1 비교
다음의 상세 나란히 비교: BSC12DN20NS3GATMA1 제조: Infineon 및 BSC340N08NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 활성사양 비교
| 파라미터 | BSC12DN20NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 23 A |
| Power Dissipation (PD, Tc) | 50 W | — |
| 패키지 | PG-TDSON-8-5 | PG-TDSON-8-5 (SuperSO8 5x6) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 3 (N-Channel Trench) |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single N-channel | — |
| 핀 수 | 8 | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |