BSC12DN20NS3GATMA1 vs BSC340N08NS3GATMA1 对比
详细并排对比 BSC12DN20NS3GATMA1 出自 Infineon 和 BSC340N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC12DN20NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 200V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 23 A |
| Power Dissipation (PD, Tc) | 50 W | — |
| 封装 | PG-TDSON-8-5 | PG-TDSON-8-5 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Technology | OptiMOS power MOSFET | OptiMOS 3 (N-Channel Trench) |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single N-channel | — |
| 引脚数量 | 8 | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |