BSL215CH6327XTSA1 vs BSS316NH6327XTSA1 Comparación
Comparación detallada lado a lado de BSL215CH6327XTSA1 por Infineon y BSS316NH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSL215CH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,21 | $0,13 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 20 V | — |
| Continuous Drain Current (I_D) | 1.5 A | — |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Power Dissipation (P_D) | 500 mW | — |
| Encapsulado / Carcasa | PG-TSOP6-6 (6-pin TSOP) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C | — |
| Configuration | Half-bridge (1 N + 1 P) | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 2 (Trench) |
| Nivel MSL | 1 (unlimited) | MSL1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Rango de temperatura de unión de funcionamiento | — | -55 C to +150 C |
| Encapsulado | — | PG-SOT23 (SOT-23-3) |
| Lead Plating | — | Pb-free (Matte Tin) |
| Automotive Qualification | — | AEC-Q101 qualified |