BSL215CH6327XTSA1 vs BSS316NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL215CH6327XTSA1 von Infineon und BSS316NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSL215CH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,13 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 20 V | — |
| Continuous Drain Current (I_D) | 1.5 A | — |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Power Dissipation (P_D) | 500 mW | — |
| Gehäuse / Bauform | PG-TSOP6-6 (6-pin TSOP) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C | — |
| Configuration | Half-bridge (1 N + 1 P) | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 2 (Trench) |
| MSL-Level | 1 (unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Gehäuse | — | PG-SOT23 (SOT-23-3) |
| Lead Plating | — | Pb-free (Matte Tin) |
| Automotive Qualification | — | AEC-Q101 qualified |