BSL215CH6327XTSA1 vs BSS316NH6327XTSA1 比較
詳細な並列比較: BSL215CH6327XTSA1 メーカー: Infineon および BSS316NH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSL215CH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.21 | $0.13 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 20 V | — |
| Continuous Drain Current (I_D) | 1.5 A | — |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Power Dissipation (P_D) | 500 mW | — |
| パッケージ / ケース | PG-TSOP6-6 (6-pin TSOP) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C | — |
| Configuration | Half-bridge (1 N + 1 P) | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 2 (Trench) |
| MSLレベル | 1 (unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| 動作接合温度範囲 | — | -55 C to +150 C |
| パッケージ | — | PG-SOT23 (SOT-23-3) |
| Lead Plating | — | Pb-free (Matte Tin) |
| Automotive Qualification | — | AEC-Q101 qualified |