BSS119NH6327XTSA1 vs BSS308PEH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS119NH6327XTSA1 por Infineon y BSS308PEH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSS119NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,12 | $0,11 |
| Tipo de transistor | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | [DATA_NEEDED: gate threshold voltage] |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Encapsulado | PG-SOT23 (SOT-23-3) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55 °C to +150 °C |
| Qualification | AEC-Q101 (automotive grade) | AEC-Q101 Automotive |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel (3,000 pcs/reel) | Tape & Reel (T/R) |
| Nivel MSL | 1 [DATA_NEEDED: confirm from datasheet] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Encapsulado / Carcasa | — | PG-SOT23 (SOT-23-3) |
| Número de pines | — | 3 |
| Standard Reel Quantity | — | 3000 pcs |