BSS119NH6327XTSA1 vs BSS308PEH6327XTSA1 对比
详细并排对比 BSS119NH6327XTSA1 出自 Infineon 和 BSS308PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 量产中规格对比
| 参数 | BSS119NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $0.11 |
| 晶体管类型 | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | [DATA_NEEDED: gate threshold voltage] |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| 封装 | PG-SOT23 (SOT-23-3) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55 °C to +150 °C |
| Qualification | AEC-Q101 (automotive grade) | AEC-Q101 Automotive |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel (3,000 pcs/reel) | Tape & Reel (T/R) |
| MSL 等级 | 1 [DATA_NEEDED: confirm from datasheet] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| 封装 / 外壳 | — | PG-SOT23 (SOT-23-3) |
| 引脚数 | — | 3 |
| Standard Reel Quantity | — | 3000 pcs |