BSS127H6327XTSA2 vs BSD235CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS127H6327XTSA2 por Infineon y BSD235CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSS127H6327XTSA2 | BSD235CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,12 |
| FET Type | N-Channel SIPMOS, enhancement mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | — |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | 500 mW |
| Temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Encapsulado | SOT-23-3 (PG-SOT23) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 | 6 |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant (lead-free) | Compliant (lead-free) |
| Sin halógenos | Yes, per IEC 61249-2-21 | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ |
| Configuration | — | N+P complementary dual MOSFET |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Technology | — | OptiMOS™ low-voltage |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C (junction) |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |