BSS127H6327XTSA2 vs BSD235CH6327XTSA1 对比

详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSD235CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 量产中

规格对比

参数 BSS127H6327XTSA2 BSD235CH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.12
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) 500 mW
工作结温 -55 C to +150 C —
封装 SOT-23-3 (PG-SOT23) —
安装类型 Surface Mount Surface Mount
引脚数量 3 6
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant (lead-free) Compliant (lead-free)
无卤 Yes, per IEC 61249-2-21 —
MSL 等级 [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Technology — OptiMOS™ low-voltage
工作温度范围 — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement

数据手册与资源

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