BSS316NH6327XTSA1 vs BSS308PEH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS316NH6327XTSA1 por Infineon y BSS308PEH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSS316NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,13 | $0,11 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | — |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Rango de temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Encapsulado | PG-SOT23 (SOT-23-3) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Tipo de transistor | — | P-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C |
| Encapsulado / Carcasa | — | PG-SOT23 (SOT-23-3) |
| Número de pines | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |