BSS316NH6327XTSA1 vs BSS308PEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS316NH6327XTSA1 von Infineon und BSS308PEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSS316NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,11 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | — |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | — |
| Montageart | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Transistortyp | — | P-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |
| Gehäuse / Bauform | — | PG-SOT23 (SOT-23-3) |
| Anzahl der Pins | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |