BSZ0909NSATMA1 vs BSZ0901NSIATMA1 Comparación
Comparación detallada lado a lado de BSZ0909NSATMA1 por Infineon y BSZ0901NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ0909NSATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,34 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 25V | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 34 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 9 A | — |
| Continuous Drain Current (ID) at TC=25C | 36 A | — |
| R-DS(on) Max at VGS=10V | 12 mOhm at ID=20A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V at ID=250 uA | — |
| Total Gate Charge (Qg) | 17 nC at VGS=10V | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance (Ciss) | 1.31 nF at VDS=15V | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 25 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | PG-TSDSON-8 (8-PowerTDFN) 3.3x3.3 mm | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Recuento de pines | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |