BSZ0909NSATMA1 vs BSZ0901NSIATMA1 Comparison

Detailed side-by-side comparison of BSZ0909NSATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSZ0909NSATMA1 BSZ0901NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology OptiMOS 25V OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 34 V 30 V
Continuous Drain Current (ID) at TA=25C 9 A —
Continuous Drain Current (ID) at TC=25C 36 A —
R-DS(on) Max at VGS=10V 12 mOhm at ID=20A —
Gate-Source Threshold Voltage (VGS(th)) 2 V at ID=250 uA —
Total Gate Charge (Qg) 17 nC at VGS=10V [DATA_NEEDED: total gate charge Qg]
Input Capacitance (Ciss) 1.31 nF at VDS=15V —
Power Dissipation (PD) at TA=25C 2.1 W —
Power Dissipation (PD) at TC=25C 25 W —
Operating Junction Temperature -55C to +150C —
Mounting Type Surface Mount Surface Mount
Package PG-TSDSON-8 (8-PowerTDFN) 3.3x3.3 mm PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Pin Count — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Operating Temperature Range — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

Datasheets & Resources

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