BSZ0909NSATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0909NSATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0909NSATMA1
BSZ0909NSATMA1 - 34V 36A N-Channel OptiMOS 25V MOSFET | Infineon
BSZ0909NSATMA1 β Active
Specification Comparison
| Parameter | BSZ0909NSATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.34 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 25V | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 34 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 9 A | β |
| Continuous Drain Current (ID) at TC=25C | 36 A | β |
| R-DS(on) Max at VGS=10V | 12 mOhm at ID=20A | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V at ID=250 uA | β |
| Total Gate Charge (Qg) | 17 nC at VGS=10V | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance (Ciss) | 1.31 nF at VDS=15V | β |
| Power Dissipation (PD) at TA=25C | 2.1 W | β |
| Power Dissipation (PD) at TC=25C | 25 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TSDSON-8 (8-PowerTDFN) 3.3x3.3 mm | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ0901NSIATMA1 |
| Series | β | OptiMOS 25V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET range) |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |