CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
N.º de pieza: CGD65B130S2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.95 | $3,95 |
| 10 | $3.4 | $34,00 |
| 100 | $2.85 | $285,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.1 | $2.100,00 |
CGD65B130S2 Descripción general
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses an AlGaN/GaN heterostructure to form a high-mobility two-dimensional electron gas (2DEG) channel. Compared to silicon MOSFETs, GaN HEMTs offer 10x higher breakdown field strength, lower on-resistance per unit area, zero reverse-recovery charge (Qrr), and sub-nanosecond switching capability. The CGD65B130S2 belongs to the discrete GaN FET category within the broader power semiconductor hierarchy: GaN HEMT → wide-bandgap transistor → power transistor → discrete semiconductor.
Key features include CGD's proprietary ICeGaN™ gate technology that allows the device to be driven directly by virtually any standard gate driver or controller IC without negative bias or external protection circuits. The transistor delivers sub-nanosecond rise/fall times, eliminating the need for gate-drive transformers in many designs. The DFN 5x6 package provides an ultra-low thermal resistance path via the exposed pad, supporting sustained high-current operation. Zero Qrr enables hard-switched half-bridge topologies without the reverse-recovery losses that plague silicon MOSFETs.
The architecture combines a normally-off enhancement-mode GaN-on-Si stack with integrated ESD protection and a robust gate clamp, simplifying inverter and PFC design. Compared to equivalent 650V silicon MOSFETs, the CGD65B130S2 reduces switching losses by approximately 50-70 percent, enabling higher switching frequencies (500 kHz to 1 MHz) and smaller magnetics. The device is suitable as a drop-in upgrade path for designers seeking efficiency gains over legacy superjunction MOSFETs.
Typical applications include 65W to 500W AC-DC power supplies, totem-pole PFC circuits, LLC and QR flyback converters for USB-PD adapters, photovoltaic microinverters, audio amplifiers, and synchronous rectification in telecom / server PSUs. The high frequency capability is especially valuable in compact USB-PD 3.1 chargers where power density is paramount.
When designing with this device, ensure the gate drive swings between 0 V and 10-12 V with minimal overshoot, and keep the high-current power loop (DC+ → high-side FET → low-side FET → DC-) as tight as physically possible to minimize parasitic inductance. Use a Kelvin source connection when available to keep the gate-drive loop separate from the high-current path.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not typically found in the manufacturer datasheet alone.
Alternativas directas para CGD65B130S2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con CGD65B130S2 (mismo factor de forma y huella) — difiere en Package, Integrated Features, Reverse Recovery Charge (Qrr), Technology, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
CGD65B130S2-T13
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
CGD65B130SH2
✅ Sustitución directa✓ En stock
$1.74 / unidad
Ver hoja de datos →CGD65A130S2
✅ Sustitución directa✓ En stock
$4.65 / unidad
Ver hoja de datos →CGD65B130S2 Valores máximos y características eléctricas
| Manufacturer | Cambridge GaN Devices |
| Tipo de transistor | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | 650 V |
| On-Resistance (RDS(on)) | 130 mΩ (typical) |
| Continuous Drain Current (ID) | 12 A |
| Gate Technology | ICeGaN™ (standard-driver compatible) |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) |
| Encapsulado | 8-DFN 5x6 mm with exposed thermal pad |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -55 °C to +150 °C (junction) |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant |
| Substrate Technology | GaN-on-silicon |
Configuración de pines de CGD65B130S2
| Pin 1 | Source (S) — Kelvin source connection for gate-drive return |
| Pin 2 | Source (S) — Power source terminal |
| Pin 3 | Source (S) — Power source terminal |
| Pin 4 | Gate (G) — ICeGaN gate input (0 to +10V drive) |
| Pin 5 | Drain (D) — Power drain terminal |
| Pin 6 | Drain (D) — Power drain terminal |
| Pin 7 | Drain (D) — Power drain terminal |
| Pin 8 | Drain (D) — Power drain terminal |
| Pin EP | Thermal Pad (Source) — Exposed pad, electrically tied to source for thermal sinking |
CGD65B130S2 Área de funcionamiento seguro (DC)
Aplicaciones típicas
CGD65B130S2 es adecuado para 7 aplicacións: 240W USB-PD 3.1 Compact Adapter, Totem-Pole Bridgeless PFC, Photovoltaic Microinverter / Solar Optimizer, Telecom / Server PSU, Class-D Audio Amplifier Output Stage, EV On-Board Charger DC-DC Stage, High-Energy-Density Industrial PSU.
240W USB-PD 3.1 Compact Adapter
The CGD65B130S2 is well-matched to 65W-240W USB Power Delivery 3.1 AC-DC adapters targeting USB Type-C 28V/36V EPR output levels. Its zero-Qrr and sub-nanosecond switching allow LLC and QR topologies to operate at 300-500 kHz, well above the 100-150 kHz limit of equivalent silicon superjunction MOSFETs. Compared to a Si-MOSFET the CGD65B130S2 reduces total converter losses by 40-50%, shrinking the heatsink and transformer volume. Place the part on the primary side of a totem-pole PFC plus LLC two-stage front end.
Recomendado
Totem-Pole Bridgeless PFC
The CGD65B130S2 is a near-ideal device for totem-pole bridgeless PFC stages in 1-3 kW server / industrial power supplies. Its zero reverse-recovery charge eliminates the CCM totem-pole dead-time penalty that defeats silicon MOSFETs, allowing continuous-conduction-mode operation at 100 kHz and above with efficiencies above 99%. The 12 A continuous drain current comfortably delivers 3 kW at universal mains. Place one CGD65B130S2 each on the high-side and low-side of the totem-pole, driven by Si8271 or similar isolated gate drivers.
Recomendado
Photovoltaic Microinverter / Solar Optimizer
Solar microinverters and module-level optimizers require DC-DC stages that operate at 200 kHz+ to fit into compact enclosures behind PV modules. The CGD65B130S2, rated at 650 V and exhibiting zero Qrr, can switch a boost or active-clamp flyback stage at this frequency while dissipating a fraction of the losses of a comparable Si-MOSFET, raising conversion efficiency above 97%. The 8-DFN 5x6 footprint permits high-power-density layouts constrained to the rear of a 60-cell module.
Recomendado
Telecom / Server PSU
48 V output server and telecom PSUs in the 1-3 kW class use a 400V intermediate bus; the primary-side full or half bridge must switch at 100-200 kHz to meet 80+ Titanium efficiency targets. The CGD65B130S2 paired in a half-bridge configuration delivers 80+ Titanium efficiency at 500 kHz on the primary side, replacing a Si-MOSFET pair while reducing switching losses by 70% per the manufacturer's application note. Use the CGD65B130S2 on both the primary full-bridge FETs and on the secondary synchronous-rectifier where VDS allows.
Recomendado
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers benefit from the same high-speed switching as power supplies. The CGD65B130S2, switching at 500 kHz-1 MHz in a full-bridge output stage, delivers THD+N figures below 0.01% into 4 ohm loads in published designs. Its 650V drain rating preserves ample headroom for predictive-protection circuits to clamp load-dump and back-EMF events without sacrificing fidelity. Pair with phase-shift modulator ICs such as TAS6424E-Q1 or TPA3255 for high-end automotive / pro-audio applications.
Recomendado
EV On-Board Charger DC-DC Stage
On-board chargers for electric vehicles convert 400V battery to 12V/48V auxiliary at 2-3 kW. The CGD65B130S2 on the 400V-bus primary side, in a totem-pole PFC + isolated LLC topology, achieves peak efficiencies near 97% with the converter size and weight required by automotive OEMs. The 8-DFN 5x6 mm package fits the elevated-cooling thermal-boss requirement typical of OBC designs. Note that AEC-Q100 automotive qualification is not listed; consider CGD's automotive-grade sibling line (suffix -Q1) for production vehicles.
Recomendado
High-Energy-Density Industrial PSU
Industrial 24V / 48V bus converters in factory automation need 1-5 kW supplies that fit into 1U rack space. The CGD65B130S2 in a phase-shift full-bridge primary stage, switching at 250 kHz, allows magnetics to shrink by 60% compared to a 100 kHz Si design. Built-in driver compatibility (ICeGaN™) eliminates negative-rail bias supplies and reduces ancillary BOM. Pair with digital controllers such as UCD3138A for full telemetry and protection.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para CGD65B130S2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | CGD65B130S2-T13 | CGD65B130SH2 | CGD65A130S2 |
|---|---|---|---|---|
| Package | 8-DFN 5x6 mm | 8-DFN 5x6 mm | 8-DFN 5x6 mm | 8-DFN 5x6 mm |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| VDS Rating (V) | 650 V | 650 V | 650 V | 650 V |
| RDS(on) typical (mΩ) | 130 mΩ | 130 mΩ | 55 mΩ | 130 mΩ |
| Reverse Recovery Qrr | 0 nC | 0 nC | 0 nC | 0 nC |
| Gate Technology | ICeGaN™ (standard driver) | ICeGaN™ (standard driver) | ICeGaN™ + NL3 current sense | ICeGaN™ (standard driver) |
Diferenciadores clave
- Standard-driver gate compatibility (ICeGaN™) (frente a GaN Systems GS-065-130-1-L)
- Higher-current same-package upgrade option (frente a CGD65B130SH2)
- Lower Q<sub>OSS</sub> than silicon superjunction MOSFETs (frente a Standard 650V Si-MOSFET class)
Notas de diseño
Minimize the high-current power loop to <5 nH. CGD's datasheet recommends stacking the DC-link decoupling cap directly between the high-side drain pad and the low-side source pad (or beneath the FETs on an inner layer). Use the source Kelvin pin (1) for the gate-driver return and the wide source pads (2-3) for the power return path. This separation keeps the gate-drive loop immune to the large di/dt in the power path, preventing false turn-on and ringing.
Estimated: at a 200 kHz switching frequency in a half-bridge delivering 1 kW to a 400 V bus, total gate-drive loss for the CGD65B130S2 is approximately equal to its switching loss. Using a 10 ohm gate resistor rather than 5 ohm cuts ringing but adds 25% to total drive loss - balance is design-specific. Note that ICeGaN™ does NOT require a negative gate bias, but do not exceed +12 V on the gate or the integrated ESD clamp activates. Do not gate-source resistor values lower than 10 kohm as this degrades the dv/dt immunity of the ICeGaN™ interface.
The 8-DFN 5x6 mm exposed pad achieves <0.5 °C/W junction-to-board with a 1 oz copper thermal landing on a 4-layer board with thermal vias (datasheet recommendation). In an LLC converter operating at 200 kHz and 1 kW, total CGD65B130S2 dissipation is typically 4-6 W, requiring about 200-300 mm² of board copper. Avoid placing the CGD65B130S2 adjacent to heat-generating magnetics - thermal crosstalk from a 90 °C inductor can push the junction above its 150 °C rating even at low dissipation.
Per the manufacturer datasheet, use a 4-layer FR4 stack with 1 oz outer copper and 0.5-1 oz inner copper. Star-ground the gate-driver return at the source Kelvin pin rather than at the power-stage ground, and run the gate-trace over an unbroken reference plane to keep the gate-loop impedance low. If your design uses a half-bridge with vertical current flow, the inner layer 1 can carry the high-current return directly beneath the FET, dropping the power-loop inductance by another 40-60% versus a planar layout.
Because the CGD65B130S2 has sub-nanosecond rise/fall times, the drain-source voltage transitions are extremely fast (50-100 V/ns). This causes severe ringing on the gate if the gate-loop and power-loop inductances are not well-controlled. Add a small ferrite bead (e.g., BLM21PG221SN1) in series with the gate resistor to dampen high-frequency ringing, but verify the impact on switching loss. Ensure oscilloscope probes use the shortest possible ground spring; 6 mm of ground lead adds tens of nH and corrupts the measurement.
Información de cumplimiento
RoHS compliant per Cambridge GaN Devices product page; no AEC-Q100 automotive qualification on the base part - contact CGD for the automotive-grade GaN line. Halogen-free per JEDEC JESD75.
