EP4CE6E22C6 vs EP4CE6E22I7N Comparación
Comparación detallada lado a lado de EP4CE6E22C6 por Intel y EP4CE6E22I7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CE6E22C6 | EP4CE6E22I7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $12,05 | $11,85 |
| Family | Cyclone IV E | Cyclone IV E |
| Device Logic Elements | 6,272 LE | — |
| Logic Array Blocks (LABs) | 392 LABs | — |
| Total RAM Bits | 270 Kbit | — |
| Embedded 18x18 Multipliers | 15 | — |
| PLLs | 2 | — |
| Maximum User I/Os | 91 | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | C6 | — |
| Temperatura de funcionamiento | 0 °C to +85 °C (Commercial) | — |
| Package Type | 144-pin EQFP (Enhanced QFP, exposed pad) | — |
| Package Dimensions | 22 mm × 22 mm | — |
| Lead Pitch | 0.5 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | TSMC 60 nm low-k | 60 nm (TSMC low-power) |
| Configuration Method | SRAM-based (volatile); JTAG, Active Serial, Passive Serial | Serial (EPCS) or JTAG |
| Estado RoHS | Compliant | Compliant |
| Logic Elements (LEs) | — | 6,272 |
| Configurable Logic Blocks (CLBs) | — | 392 |
| Embedded Memory (RAM) | — | 270 Kbits |
| User Flash Memory | — | 4 Kbits |
| User I/O Pins | — | 91 |
| PLLs (General-Purpose) | — | 2 |
| Global Clock Networks | — | Up to 20 |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V (nominal 1.2 V) |
| Operating Temperature (I7 grade) | — | -40C to +100C (junction) |
| Maximum Operating Frequency | — | Up to 472.5 MHz |
| Encapsulado | — | 144-pin EQFP (Plastic Enhanced QFP) with exposed pad |
| Supported I/O Standards | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| Nivel MSL | — | 3 (per JEDEC J-STD-020) |