H5ANAG6NBJR-RDC vs H5ANAG8NBJR-RDC Comparación
Comparación detallada lado a lado de H5ANAG6NBJR-RDC por SK hynix y H5ANAG8NBJR-RDC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG6NBJR-RDC | H5ANAG8NBJR-RDC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,60 | $3,55 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16 Gbit |
| Velocidad de datos | 2666 Mbps (speed grade -RDC) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interfaz | Synchronous, double data rate | SSTL12 |
| Clocking | Fully synchronous to both clock edges | — |
| Encapsulado | FBGA (Ball Grid Array), surface mount | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | Compliant (lead-free PBGA per family product data) |
| Organización de memoria | — | 2G x 8 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade (suffix R) | — | DDR4-2666 class |
| Refresh | — | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | — | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | — | DQS with read/write training |
| Data Bus Inversion | — | Supported (DBI) |
| Latencia CAS | — | [DATA_NEEDED: CAS Latency] |
| Estado del ciclo de vida | — | Active |