H5TC4G63AFR-PBJ vs H5TC4G63AFR-PBA Comparación
Comparación detallada lado a lado de H5TC4G63AFR-PBJ por SK hynix y H5TC4G63AFR-PBA por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5TC4G63AFR-PBJ | H5TC4G63AFR-PBA |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,50 | $3,98 |
| Tipo de memoria | DDR3L SDRAM | DDR3L SDRAM |
| Tamaño de memoria | 4 Gb (256M x 16) | — |
| Tensión de alimentación | 1.35 V | — |
| Encapsulado | 96-ball TFBGA | 96-ball FBGA |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Velocidad de datos | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1866 Mbps (PC3L-14900) |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4Gb |
| Organización de memoria | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| CAS Latency (CL) | — | 11, 12, 13 |
| Rango de temperatura de funcionamiento | — | 0°C to +95°C (Tcase) |
| Interfaz | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |