IAUC100N04S6L014ATMA1 vs IAUT300N08S5N011ATMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6L014ATMA1 por Infineon y IAUT300N08S5N011ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC100N04S6L014ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Part Family | IAUC / OptiMOS 6 40V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | 80 V |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | 410 A (Tj) |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | 3.8 V |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS 5 (trench MOSFET) |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | 1 |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| Qualification | — | Automotive (AEC-Q101) |