IAUC100N04S6L014ATMA1 vs IAUT300N08S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L014ATMA1 by Infineon and IAUT300N08S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 β ActiveInfineon
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
IAUT300N08S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L014ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $5.40 |
| Manufacturer | Infineon Technologies | β |
| Part Family | IAUC / OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (V_DS) | 40 V | 80 V |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | 410 A (Tj) |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | 3.8 V |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | β |
| Power Dissipation (P_D, Tc) | 100 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | β |
| Technology | OptiMOS 6 | OptiMOS 5 (trench MOSFET) |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 |
| Packaging | Tape & Reel (ATMA1 suffix) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (I_D, T_C=25C) | β | 300 A |
| R_DS(on) max | β | 1.10 mOhm at V_GS=10 V |
| Total Gate Charge (Q_g) | β | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | β | 16.25 nF |
| Output Capacitance (C_oss) | β | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | β | 130 pF |
| Power Dissipation (P_D) | β | 375 W at T_C=25C |
| Qualification | β | Automotive (AEC-Q101) |