IAUC120N04S6N009ATMA1 vs IAUA180N04S5N012AUMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6N009ATMA1 por Infineon y IAUA180N04S5N012AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActivoInfineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6N009ATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,60 | $1,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 120 A | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed I_D value] | — |
| R_DS(on) max @ V_GS=10V | 0.9 mΩ | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Total Gate Charge Q_g typ | [DATA_NEEDED: Q_g typical] | — |
| Power Dissipation (Tc) | 150 W | — |
| Thermal Resistance R_thJC max | 1.0 K/W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-33 (5x6 mm) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Nivel MSL | 1 | — |
| RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes (per Infineon product page) | — |
| Part Number | — | IAUA180N04S5N012AUMA1 |
| Series | — | OptiMOS-5 40 V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 180 A (Tc) |
| Maximum Power Dissipation (PD) | — | 125 W (Tc) |
| R_DS(on) (max) | — | 1.2 mΩ at 10 V VGS |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (Tj) |
| Technology | — | OptiMOS-5 Trench |
| Estado RoHS | — | Compliant |