IAUC120N06S5L011ATMA1 vs IPB020N10N5LFATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L011ATMA1 por Infineon y IPB020N10N5LFATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ ActivoInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L011ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,10 | $2,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | OptiMOS 5 Linear FET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | — |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | — |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (EAS) | — |
| Technology | — | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Marking Code | — | 020N10LF |