IAUC120N06S5L011ATMA1 vs IPB020N10N5LFATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and IPB020N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΞ© OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L011ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $2.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | OptiMOS 5 Linear FET |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | β |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | β |
| Power Dissipation (P_D) | 188 W at T_C = 25 Β°C | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (EAS) | β |
| Technology | β | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (Tc) | β | 176 A |
| Silicon-Limited Drain Current | β | 289 A |
| Package-Limited Drain Current | β | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | β | 10.2 A |
| On-State Resistance RDS(on) max | β | 2.0 mΞ© |
| Total Power Dissipation (Tc) | β | 313 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Marking Code | β | 020N10LF |