IAUC120N06S5L011ATMA1 vs IPB020N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5L011ATMA1 von Infineon und IPB020N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ AktivInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N06S5L011ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $2,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | OptiMOS 5 Linear FET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | — |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | — |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (EAS) | — |
| Technology | — | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Marking Code | — | 020N10LF |