IAUCN04S7N037GATMA1 vs IAUA180N04S5N012AUMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N037GATMA1 por Infineon y IAUA180N04S5N012AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoInfineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N037GATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $1,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS-5 40 V |
| Technology | Trench MOSFET, N-Channel | OptiMOS-5 Trench |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Encapsulado | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² |
| Tipo de montaje | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction/ambient temperature limits] | -55 °C to +175 °C (Tj) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Part Number | — | IAUA180N04S5N012AUMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 180 A (Tc) |
| Maximum Power Dissipation (PD) | — | 125 W (Tc) |
| R_DS(on) (max) | — | 1.2 mΩ at 10 V VGS |
| Gate-Source Voltage (VGS) max | — | ±20 V |