IAUZN04S7L030ATMA1 vs IAUC64N08S5L075ATMA1 Comparación
Comparación detallada lado a lado de IAUZN04S7L030ATMA1 por Infineon y IAUC64N08S5L075ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUZN04S7L030ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,58 |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | — |
| Pulsed Drain Current (IDM, Tj) | 100 A | — |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Operating Junction Temperature (Tj) | -55C to +175C | — |
| Technology Family | OptiMOS-7 | — |
| Channel Type | N-Channel | — |
| Encapsulado | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | AEC-Q101 qualified |
| RoHS Compliance | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Número de pines | — | 8 |