IAUZN04S7L030ATMA1 vs IAUC64N08S5L075ATMA1 Comparison

Detailed side-by-side comparison of IAUZN04S7L030ATMA1 by Infineon and IAUC64N08S5L075ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUZN04S7L030ATMA1 IAUC64N08S5L075ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge]
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Package PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified
RoHS Compliance Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Number — IAUC64N08S5L075ATMA1
Transistor Type — N-Channel MOSFET
Technology — OptiMOS™ 5
Continuous Drain Current (ID) at TC=25°C — 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V — 7.5 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC=25°C — 75 W
Operating Junction Temperature — -55 °C to +175 °C
Number of Pins — 8

Datasheets & Resources

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