IAUZN04S7L030ATMA1 vs IAUC64N08S5L075ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZN04S7L030ATMA1 von Infineon und IAUC64N08S5L075ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZN04S7L030ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,58 |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | — |
| Pulsed Drain Current (IDM, Tj) | 100 A | — |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Operating Junction Temperature (Tj) | -55C to +175C | — |
| Technology Family | OptiMOS-7 | — |
| Channel Type | N-Channel | — |
| Gehäuse | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TDSON-8-33 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | AEC-Q101 qualified |
| RoHS Compliance | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Anzahl der Pins | — | 8 |