IGW40N120H3FKSA1 vs IGD08N120S7ATMA1 Comparación
Comparación detallada lado a lado de IGW40N120H3FKSA1 por Infineon y IGD08N120S7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGW40N120H3FKSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,07 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Encapsulado / Carcasa | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Temperatura de unión de funcionamiento | — | -40C to +175C (industry grade) |
| Encapsulado | — | PG-TO252-3 (DPAK) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |