IGW40N120H3FKSA1 vs IGD08N120S7ATMA1 Сравнение
Подробное сравнение бок о бок IGW40N120H3FKSA1 от Infineon и IGD08N120S7ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IGW40N120H3FKSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | IGBTs | IGBTs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,07 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| Тип монтажа | Through Hole | Surface Mount |
| Корпус / Типоразмер | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Рабочая температура перехода | — | -40C to +175C (industry grade) |
| Корпус | — | PG-TO252-3 (DPAK) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |