IGW40N120H3FKSA1 vs IGD08N120S7ATMA1 对比
详细并排对比 IGW40N120H3FKSA1 出自 Infineon 和 IGD08N120S7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGW40N120H3FKSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | IGBTs | IGBTs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.07 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| 安装类型 | Through Hole | Surface Mount |
| 封装 / 外壳 | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| 工作结温 | — | -40C to +175C (industry grade) |
| 封装 | — | PG-TO252-3 (DPAK) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |