IGW40N120H3FKSA1 vs IGD08N120S7ATMA1 比較
詳細な並列比較: IGW40N120H3FKSA1 メーカー: Infineon および IGD08N120S7ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IGW40N120H3FKSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | IGBTs | IGBTs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.07 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| 実装タイプ | Through Hole | Surface Mount |
| パッケージ / ケース | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| 動作接合温度 | — | -40C to +175C (industry grade) |
| パッケージ | — | PG-TO252-3 (DPAK) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |