IKD06N60RATMA1 vs IGB50N60TATMA1 Comparación
Comparación detallada lado a lado de IKD06N60RATMA1 por Infineon y IGB50N60TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IKD06N60RATMA1 | IGB50N60TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $2,20 |
| Tipo de transistor | IGBT - Trench Field Stop with anti-parallel diode | — |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | — |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | Trench + Field-Stop |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | — |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK / TO-263) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (2 + Tab) | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | — | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Tensión de saturación colector-emisor (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Temperatura de unión de funcionamiento | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| Nivel MSL | — | 1 |